We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atomic layer deposition (ALD) with bulge test technique using a free-standing thin film membrane and extended applicability of bulge test technique. Elastic modulus was determined to be 115 GPa for a 50 nm thick film and 170 GPa for a 15 nm thick film. Residual stress was 142 MPa in the 50 nm Al2O3 film while it was 116 MPa in the 15 nm Al2O3 film. Density was 3.11 g cm(-3) for the 50 nm film and 3.28 g cm(-3) for the 15 nm film. Fracture strength at 100 hPa s(-1) pressure ramp rate was 1.72 GPa for the 50 nm film while for the 15 nm film it was 4.21 GPa, almost 2.5-fold. Fracture strength was observed to be positively strain-rate dependent. Weibull moduli of these films were very high being around 50. The effective volume of a circular film in bulge test was determined from a FEM model enabling future comparison of fracture strength data between different techniques.

We present a low-cost laboratory X-ray absorption spectrometer that uses a conventional X-ray tube source and bent Johann-type crystal monochromators. The instrument is designed for X-ray absorption spectroscopy studies in the 4-20 keV range which covers most K edges of 3d transition metals and L edges of 5d transition metals and actinides. The energy resolution is typically in the range of 1-5 eV at 10 keV depending on the crystal analyser and the Bragg angle. Measurements can be performed in transmission, fluorescence, and imaging modes. Due to its simple and modular design, the spectrometer can be modified to accommodate additional equipment and complex sample environments required for in situ studies. A showcase of various applications is presented. Published under license by AIP Publishing.

The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.

Surface smoothening by substrate annealing was studied as a pre-treatment for improving the corrosion protection provided to copper by 10, 20 and 50 nm thick alumina coatings deposited by atomic layer deposition. The interplay between substrate surface state and deposited film thickness for controlling the corrosion protection provided by ultrathin barrier films is demonstrated. Pre-annealing at 750 degrees C heals out the dispersed surface heterogeneities left by electropolishing and reduces the surface roughness to less than 2 nm independently of the deposited film thickness. For 10 nm coatings, substrate surface smoothening promotes the corrosion resistance. However, for 20 and 50 nm coatings, it is detrimental to the corrosion protection due to local detachment of the deposited films. The weaker adherence of the thicker coatings is assigned to the stresses accumulated in the films with increasing deposited thickness. Healing out the local heterogeneities on the substrate surface diminishes the interfacial strength that is bearing the stresses of the deposited films, thereby increasing adhesion failure for the thicker films. Pitting corrosion occurs at the local sites of adhesion failure. Intergranular corrosion occurs at the initially well coated substrate grain boundaries because of the growth of a more defective and permeable coating at grain boundaries. (C) 2016 Elsevier B.V. All rights reserved.

Selective deposition of hybrid and inorganic materials inside nanostructures could enable major nanotechnological advances. However, inserting ready-made composites inside nanocavities may be difficult, and therefore, stepwise approaches are needed. In this paper, a poly(ethyl acrylate) template is grown selectively inside cavities via condensation-controlled toposelective vapor deposition, and the polymer is then hybridized by alumina, titania, or zinc oxide. The hybridization is carried out by infiltrating the polymer with a vapor-phase metalorganic precursor and water vapor either via a short-pulse (atomic layer deposition, ALD) or a long-pulse (vapor phase infiltration, VPI) sequence. When the polymer-MOx hybrid material is calcined at 450 degrees C in air, an inorganic phase is left as the residue. Various suspected confinement effects are discussed. The infiltration of inorganic materials is reduced in deeper layers of the cavity-grown polymer and is dependent on the cavity geometry. The structure of the inorganic deposition after calcination varies from scattered particles and their aggregates to cavity-capping films or cavity-filling low-density porous deposition, and the inorganic deposition is often anisotropically cracked. A large part of the infiltration is achieved already during the short-pulse experiments with a commercial ALD reactor. Furthermore, the infiltrated polymer is more resistant to dissolution in acetone whereas the inorganic component can still be heavily affected by phosphoric acid.

Nickel-rich layered oxides, such as LiNi0.6Co0.2Mn0.2O2 (NMC622), are high-capacity electrode materials for lithium-ion batteries. However, this material faces issues, such as poor durability at high cut-off voltages (>4.4 V vs Li/Li+), which mainly originate from an unstable electrode-electrolyte interface. To reduce the side reactions at the interfacial zone and increase the structural stability of the NMC622 materials, nanoscale (