2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically examined, including electronics and optoelectonics, electrocatalysis and photocatalysis, energy storage, lubrication, plasmonics, solar cells, and photonics. This review focuses on understanding the interplay between ALD precursors and deposition conditions, the resulting film characteristics such as thickness, crystallinity, and morphology, and ultimately device performance. Through rational choice of precursors and conditions, ALD is observed to exhibit potential to meet the varying requirements of widely different applications. Beyond the current state of ALD TMDCs, the future prospects, opportunities, and challenges in different applications are discussed. The authors hope that the review aids in bringing together experts in the fields of ALD, TMDCs, and various applications to eventually realize industrial applications of ALD TMDCs.

Intermetallics form a versatile group of materials that possess unique properties ranging from superconductivity to giant magnetoresistance. The intermetallic Co-Sn and Ni-Sn compounds are promising materials for magnetic applications as well as for anodes in lithium- and sodium-ion batteries. Herein, a method is presented for the preparation of Co3Sn2 and Ni3Sn2 thin films using diamine adducts of cobalt(II) and nickel(II) chlorides, CoCl2(TMEDA) and NiCl2(TMPDA) (TMEDA = N,N,N ',N '-tetramethylethylenediamine, TMPDA = N,N,N ',N '-tetramethyl-1,3-propanediamine) combined with tributyltin hydride. The films are grown by atomic layer deposition (ALD), a technique that enables conformal film deposition with sub-nanometer thickness control. The Co3Sn2 process fulfills the typical ALD qualifications, such as self-limiting growth, excellent film uniformity, and conformal coverage of a trench structure. X-ray diffraction (XRD) shows reflections characteristic to the hexagonal Co3Sn2 phase, which confirms that the films are, indeed, intermetallic instead of being mere alloys of Co and Sn. The films are extremely pure with impurity levels each below 1.0 at.%. Ni3Sn2 films similarly exhibit the expected XRD reflections for the intermetallic phase and are of high purity. The Co3Sn2 film show magnetic hysteresis with high coercivity values exceeding 500 Oe, indicating great potential in terms of applicability of the films.

The growth mechanism of Atomic Layer Deposition (ALD) on polymeric surfaces differs from growth on inorganic solid substrates, such as silicon wafer or glass. In this paper, we report the growth experiments of Al2O3 and ZnO on nonwoven poly-L-lactic acid (PLLA), polyethersulphone (PES) and cellulose acetate (CA) fibres. Material growth in both ALD and infiltration mode was studied. The structures were examined with a scanning electron microscope (SEM), scanning transmission electron microscope (STEM), attenuated total reflectance-fourier-transform infrared spectroscopy (ATR-FTIR) and Al-27 nuclear magnetic resonance (NMR). Furthermore, thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) analysis were used to explore the effect of ALD deposition on the thermal properties of the CA polymer. According to the SEM, STEM and ATR-FTIR analysis, the growth of Al2O3 was more uniform than ZnO on each of the polymers studied. In addition, according to ATR-FTIR spectroscopy, the infiltration resulted in interactions between the polymers and the ALD precursors. Thermal analysis (TGA/DSC) revealed a slower depolymerization process and better thermal resistance upon heating both in ALD-coated and infiltrated fibres, more pronounced on the latter type of structures, as seen from smaller endothermic peaks on TA.

We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atomic layer deposition (ALD) with bulge test technique using a free-standing thin film membrane and extended applicability of bulge test technique. Elastic modulus was determined to be 115 GPa for a 50 nm thick film and 170 GPa for a 15 nm thick film. Residual stress was 142 MPa in the 50 nm Al2O3 film while it was 116 MPa in the 15 nm Al2O3 film. Density was 3.11 g cm(-3) for the 50 nm film and 3.28 g cm(-3) for the 15 nm film. Fracture strength at 100 hPa s(-1) pressure ramp rate was 1.72 GPa for the 50 nm film while for the 15 nm film it was 4.21 GPa, almost 2.5-fold. Fracture strength was observed to be positively strain-rate dependent. Weibull moduli of these films were very high being around 50. The effective volume of a circular film in bulge test was determined from a FEM model enabling future comparison of fracture strength data between different techniques.

There is a growing need for bottom-up fabrication methods in microelectronic industry as top-down, lithography-based methods face increasing challenges. In Photo-assisted atomic layer deposition (Photo-ALD), photons supply energy to the deposition reactions on the surface. Here, a process and patterning for Photo-ALD of copper is reported, with inherently selective, self-aligned film growth without any photomasking or additive layers. Highly conductive and pure copper films are selectively deposited on tantalum oxide for over hundred nanometers of film thickness, while no copper deposits on silicon or aluminum oxide. On anatase titanium dioxide, copper deposition is crystal-facet selective. Selective deposition of a metal is realized on oxides, which has been especially challenging for ALD. This study indicates that the growth mechanism is closely related to photocatalysis: the photons interact with the material under the growing copper film, enabling the inherent selectivity. The findings provide promising material engineering schemes for microelectronics, photocatalysis, and photovoltaics.

Background: The increasing demand for bone implants with improved osseointegration properties has prompted researchers to develop various coating types for metal implants. Atomic layer deposition (ALD) is a method for producing nanoscale coatings conformally on complex three-dimensional surfaces. We have prepared hydroxyapatite (HA) coating on titanium (Ti) substrate with the ALD method and analyzed the biocompatibility of this coating in terms of cell adhesion and viability. Methods: HA coatings were prepared on Ti substrates by depositing CaCO3 films by ALD and converting them to HA by wet treatment in dilute phosphate solution. MC3T3-E1 preosteoblasts were cultured on ALD-HA, glass slides and bovine bone slices. ALD-HA and glass slides were either coated or non-coated with fibronectin. After 48h culture, cells were imaged with scanning electron microscopy (SEM) and analyzed by vinculin antibody staining for focal adhesion localization. An 344,5-dimethylthiazol-2-yl]-2,5-diphenyl tetrazolium bromide (MTT) test was performed to study cell viability. Results: Vinculin staining revealed similar focal adhesion-like structures on ALD-HA as on glass slides and bone, albeit on ALD-HA and bone the structures were thinner compared to glass slides. This might be due to thin and broad focal adhesions on complex three-dimensional surfaces of ALD-HA and bone. The MTT test showed comparable cell viability on ALD-HA, glass slides and bone. Conclusion: ALD-HA coating was shown to be biocompatible in regard to cell adhesion and viability. This leads to new opportunities in developing improved implant coatings for better osseointegration and implant survival.

Ensuring adequate air quality is integral to healthy living. Since in modern societies the majority of time is spent indoors, understanding indoor air pollution and the means of air purification are of great importance. Adverse health effects are induced by volatile organic compounds (VOC) that originate from everyday activities and our surroundings. Photocatalysis is a radiation-activated chemical transformation that can be used to decompose organic pollutants into harmless constituents. However, existing air purification solutions employing photocatalysis often rely on UV light limiting the use of solar radiation. Titanium dioxide is a popular photocatalyst material, but it requires modification to its electronic properties to respond to visible light. An established approach is to introduce atoms of other dopant elements into the titania lattice. Atomic layer deposition (ALD) is a thin film deposition technique widely studied especially in metal and metal oxide research. Following from the principle of sequential saturation of the surface, control over the size and composition of the film may reach atomic level. Since the chemical configuration of a doped TiO2 film is of utmost importance to successful modification, ALD is an excellent tool to examine suitable photocatalytic TiO2 chemistries. Furthermore, thin solid films of catalytically active material would have a distinguished advantage for deployment in real-life settings over their powderous counterparts. The literature review of this thesis explores the semiconductor photocatalysis with an eye on its suitability to indoor air purification. The motivation is to give the reader a view on the air quality issue, the existing technological solutions and how a thin film photocatalyst could supplement the field. Titanium dioxide doping concepts are introduced to elucidate the rationale behind the experimental efforts. The experimental part describes a development project to deposit visible-light responding photocatalysts. Titanium dioxide thin films co-doped with nitrogen and zinc/fluorine were grown on steel plates. An in-house built reactor system was used to study acetaldehyde degradation under irradiation. Unfortunately, the reactor experienced a malfunction, rendering a large part of the results futile. Moreover, months of valuable time were lost in chasing a mirage of fallacious data. In the end an ALD grown photocatalyst responding to visible light could not be materialized.

High-performance p- type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al2O3 passivation layer on the Cu2O channel, followed by vacuum annealing at 300 degrees C. Detailed characterization by transmission electron microscopy-energy dispersive X-ray analysis and X-ray photoelectron spectroscopy shows that the surface of Cu2O is reduced following Al2O3 deposition and indicates the formation of a 1-2 nm thick CuAlO2 interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al2O3, leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state.

Atomic layer deposition (ALD) was used to prepare a thin alumina layer on Fischer-Tropsch catalysts. Co-Pt-Si/gamma-Al2O3 catalyst was overcoated with 15-40 cycles of Al2O3 deposited from trimethylaluminum (TMA) and water vapor, followed by thermal annealing. The resulting tailored Fischer-Tropsch catalyst with 35 cycle ALD overcoating had increased activity compared to unmodified catalyst. The increase in activity was achieved without significant loss of selectivity towards heavier hydrocarbons. Altered catalyst properties were assumed to result from cobalt particle stabilization by ALD alumina overcoating and nanoscale porosity of the overcoating. In addition to optimal thickness of the overcoat, thermal annealing was an essential part of preparing ALD overcoated catalyst.

Van der Waals epitaxy holds great promise in producing high-quality films of 2D materials. However, scalable van der Waals epitaxy processes operating at low temperatures and low vacuum conditions are lacking. Herein, atomic layer deposition is used for van der Waals epitaxy of continuous multilayer films of 2D materials HfS2, MoS2, SnS2, and ZrS2 on muscovite mica and PbI2 on sapphire at temperatures between 75 degrees C and 400 degrees C. For the metal sulfides on mica, the main epitaxial relation is MS2 mica. Some domains rotated by 30 degrees are also observed corresponding to the MS2 mica alignment. In both cases, the presence of domains rotated by 60 degrees (mirror twins) is also expected. For PbI2 on sapphire, the epitaxial relation is PbI2 Al2O3 with no evidence of 30 degrees domains. For all of the studied systems there is relatively large in-plane mosaicity and in the PbI2/Al2O3 system some non-epitaxial domains are also observed. The study presents first steps of an approach towards a scalable and semiconductor industry compatible van der Waals epitaxy method.