Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures

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Gaubas , E , Ceponis , T , Vaitkus , J & Raisanen , J 2011 , ' Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures ' AIP Advances , vol. 1 , no. 2 , 022143 , pp. 0221143-1 . DOI: 10.1063/1.3605715

Title: Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures
Author: Gaubas, E.; Ceponis, T.; Vaitkus, J.; Raisanen, J.
Contributor: University of Helsinki, Department of Physics
Date: 2011-06
Language: eng
Number of pages: 13
Belongs to series: AIP Advances
ISSN: 2158-3226
URI: http://hdl.handle.net/10138/161485
Subject: TRANSIENT CURRENT
DETECTORS
PHOTOCONDUCTIVITY
114 Physical sciences
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