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http://hdl.handle.net/10138/161485

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Gaubas , E , Ceponis , T , Vaitkus , J & Raisanen , J 2011 , ' Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures ' , AIP Advances , vol. 1 , no. 2 , 022143 , pp. 0221143-1 . https://doi.org/10.1063/1.3605715

Title:	Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures
Author:	Gaubas, E.; Ceponis, T.; Vaitkus, J.; Raisanen, J.
Contributor organization:	Department of Physics
Date:	2011-06
Language:	eng
Number of pages:	13
Belongs to series:	AIP Advances
ISSN:	2158-3226
DOI:	https://doi.org/10.1063/1.3605715
URI:	http://hdl.handle.net/10138/161485
Subject:	TRANSIENT CURRENT DETECTORS PHOTOCONDUCTIVITY 114 Physical sciences
Peer reviewed:	Yes
Rights:	cc_by
Usage restriction:	openAccess
Self-archived version:	publishedVersion



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