Surface-Enhanced Raman Scattering of Silicon Nanocrystals in a Silica Film

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http://hdl.handle.net/10138/164549

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Novikov , S & Khriachtchev , L 2016 , ' Surface-Enhanced Raman Scattering of Silicon Nanocrystals in a Silica Film ' Scientific Reports , vol. 6 , 27027 . DOI: 10.1038/srep27027

Title: Surface-Enhanced Raman Scattering of Silicon Nanocrystals in a Silica Film
Author: Novikov, Sergei; Khriachtchev, Leonid
Contributor: University of Helsinki, Department of Chemistry
Date: 2016-06-03
Language: eng
Number of pages: 9
Belongs to series: Scientific Reports
ISSN: 2045-2322
URI: http://hdl.handle.net/10138/164549
Abstract: Surface-enhanced Raman scattering (SERS) is an intriguing effect, efficiency of which depends on many factors and whose applicability to a given system is not obvious before the experiment. The motivation of the present work is to demonstrate the SERS effect on silicon nanocrystals (Si-nc) embedded in silica, the material of high technological importance. Using the Ag overlayer method, we have found the SERS effect for this material. The best result is obtained for Ag layers of a weight thickness of 12 nm, whose surface plasmons are in a resonance with the laser wavelength (488 nm). The enhancement obtained for the Raman signal from 3-4-nm Si-nc in a 40-nm SiOx film is above 100. The SERS effect is about twice stronger for ultra-small Si-nc (similar to 1 nm) and/or disordered silicon compared to Si-nc with sizes of 3-4 nm. The SERS measurements with an Ag overlayer allow detecting silicon crystallization for ultrathin SiOx films and/or for very low Si excess and suppress the Raman signal from the substrate and the photoluminescence of the film.
Subject: SINGLE-MOLECULE DETECTION
SILVER NANOPARTICLES
PLASMON RESONANCE
SI NANOCRYSTALS
ISLAND FILMS
SERS
SPECTROSCOPY
PHOTOLUMINESCENCE
MONOLAYERS
INTENSITY
116 Chemical sciences
114 Physical sciences
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