A computationally efficient method to solve the Takagi-Taupin equations for a large deformed crystal

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dc.contributor.author Honkanen, Ari-Pekka
dc.contributor.author Monaco, Giulio
dc.contributor.author Huotari, Simo
dc.date.accessioned 2016-08-22T13:06:01Z
dc.date.available 2016-08-22T13:06:01Z
dc.date.issued 2016-08
dc.identifier.citation Honkanen , A-P , Monaco , G & Huotari , S 2016 , ' A computationally efficient method to solve the Takagi-Taupin equations for a large deformed crystal ' , Journal of Applied Crystallography , vol. 49 , no. 4 , pp. 1284–1289 . https://doi.org/10.1107/S1600576716010402
dc.identifier.other PURE: 59221470
dc.identifier.other PURE UUID: cfa4baa8-04b0-4549-ace8-8a0c3c11ac4a
dc.identifier.other Scopus: 84980572875
dc.identifier.other ORCID: /0000-0003-4506-8722/work/29422496
dc.identifier.other ORCID: /0000-0002-6822-3062/work/31526658
dc.identifier.uri http://hdl.handle.net/10138/166044
dc.description.abstract We present a treatise on solving the Takagi-Taupin equations in the case of a strain field with an additional, spatially slowly varying component (owing to e.g. heat expansion or angular compression). We show that the presence of such a component in a typical case merely shifts the reflectivity curve as a function of wavelength or incidence angle, while having a negligible effect on its shape. On the basis of the derived result, we develop a computationally efficient method to calculate the reflectivity curve of a large deformed crystal. The validity of the method is demonstrated by compared computed reflectivity curves with experimental ones for bent silicon wafers. An excellent agreement is observed. en
dc.format.extent 6
dc.language.iso eng
dc.relation.ispartof Journal of Applied Crystallography
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject 114 Physical sciences
dc.title A computationally efficient method to solve the Takagi-Taupin equations for a large deformed crystal en
dc.type Article
dc.contributor.organization Department of Physics
dc.contributor.organization Materials Physics
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1107/S1600576716010402
dc.relation.issn 1600-5767
dc.rights.accesslevel openAccess
dc.type.version publishedVersion
dc.identifier.url http://arxiv.org/abs/1601.07427

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