Binding a carbon nanotube to the Si(100) surface using ion irradiation-an atomistic simulation study

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dc.contributor.author Kotakoski, J
dc.contributor.author Nordlund, Kai
dc.date.accessioned 2016-08-29T11:37:01Z
dc.date.available 2016-08-29T11:37:01Z
dc.date.issued 2006
dc.identifier.citation Kotakoski , J & Nordlund , K 2006 , ' Binding a carbon nanotube to the Si(100) surface using ion irradiation-an atomistic simulation study ' , New Journal of Physics , vol. 8 , pp. 115 . https://doi.org/10.1088/1367-2630/8/7/115
dc.identifier.other PURE: 543283
dc.identifier.other PURE UUID: 32236c60-9be1-4f56-92fc-52f470bbec29
dc.identifier.other dawa_publication: 151302
dc.identifier.other WOS: 000239139200002
dc.identifier.other Scopus: 33746255368
dc.identifier.other ORCID: /0000-0001-6244-1942/work/29468589
dc.identifier.uri http://hdl.handle.net/10138/166269
dc.description.abstract "Using carbon nanotubes (CNTs) as building blocks in silicon-based electronics requires good electric contacts between the tubes and other devices. Recent experimental and theoretical works have shown that irradiation can be used to modify both the structure and the electrical properties of nanotubes, and also to create new covalent bonds to different nanotube structures. In this study, we have used atomistic computer simulations with analytical, empirically fitted interaction models, to examine the possibility to enhance binding between a CNT and a silicon substrate with C, Si and Ne ion irradiation. Low irradiation doses (< 2.8 x 10(14) ions/cm(2)) and energies (0.2 - 2.0 keV) were used, to ensure that the irradiated nanotube will not be destroyed. Our results indicate, that ion irradiation can be used to create new covalent bonds, and also to increase the binding energy between these structures, when the irradiation doses and energies are carefully chosen. We found that a typical number of created new covalent C - Si bonds is 0.5 - 0.9 (10(14) ions/cm(2))(-1), and a typical increase in the binding energy between the structures is 100 - 400% for moderate irradiation doses." sv
dc.description.abstract "Using carbon nanotubes (CNTs) as building blocks in silicon-based electronics requires good electric contacts between the tubes and other devices. Recent experimental and theoretical works have shown that irradiation can be used to modify both the structure and the electrical properties of nanotubes, and also to create new covalent bonds to different nanotube structures. In this study, we have used atomistic computer simulations with analytical, empirically fitted interaction models, to examine the possibility to enhance binding between a CNT and a silicon substrate with C, Si and Ne ion irradiation. Low irradiation doses (< 2.8 x 10(14) ions/cm(2)) and energies (0.2 - 2.0 keV) were used, to ensure that the irradiated nanotube will not be destroyed. Our results indicate, that ion irradiation can be used to create new covalent bonds, and also to increase the binding energy between these structures, when the irradiation doses and energies are carefully chosen. We found that a typical number of created new covalent C - Si bonds is 0.5 - 0.9 (10(14) ions/cm(2))(-1), and a typical increase in the binding energy between the structures is 100 - 400% for moderate irradiation doses." fi
dc.description.abstract "Using carbon nanotubes (CNTs) as building blocks in silicon-based electronics requires good electric contacts between the tubes and other devices. Recent experimental and theoretical works have shown that irradiation can be used to modify both the structure and the electrical properties of nanotubes, and also to create new covalent bonds to different nanotube structures. In this study, we have used atomistic computer simulations with analytical, empirically fitted interaction models, to examine the possibility to enhance binding between a CNT and a silicon substrate with C, Si and Ne ion irradiation. Low irradiation doses (< 2.8 x 10(14) ions/cm(2)) and energies (0.2 - 2.0 keV) were used, to ensure that the irradiated nanotube will not be destroyed. Our results indicate, that ion irradiation can be used to create new covalent bonds, and also to increase the binding energy between these structures, when the irradiation doses and energies are carefully chosen. We found that a typical number of created new covalent C - Si bonds is 0.5 - 0.9 (10(14) ions/cm(2))(-1), and a typical increase in the binding energy between the structures is 100 - 400% for moderate irradiation doses." en
dc.language.iso eng
dc.relation.ispartof New Journal of Physics
dc.rights cc_by
dc.rights.uri info:eu-repo/semantics/openAccess
dc.title Binding a carbon nanotube to the Si(100) surface using ion irradiation-an atomistic simulation study en
dc.type Article
dc.contributor.organization Accelerator Laboratory (Department of Physics) (-2009)
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1088/1367-2630/8/7/115
dc.relation.issn 1367-2630
dc.rights.accesslevel openAccess
dc.type.version publishedVersion

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