Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

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Dhaka , V D S , Tkachenko , N V , Pavelescu , E -M , Lemmetyinen , H , Hakkarainen , T , Guina , M , Konttinen , J , Okhotnikov , O , Pessa , M , Arstila , K & Keinonen , J 2005 , ' Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics ' , New Journal of Physics , vol. 7 , no. 131 . https://doi.org/10.1088/1367-2630/7/1/131

Title: Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics
Author: Dhaka, V. D. S; Tkachenko, N. V; Pavelescu, E.-M; Lemmetyinen, H; Hakkarainen, T; Guina, M; Konttinen, J; Okhotnikov, O; Pessa, M; Arstila, Kai; Keinonen, Juhani
Contributor organization: Accelerator Laboratory (Department of Physics) (-2009)
Date: 2005
Language: eng
Number of pages: 11
Belongs to series: New Journal of Physics
ISSN: 1367-2630
DOI: https://doi.org/10.1088/1367-2630/7/1/131
URI: http://hdl.handle.net/10138/166272
Abstract: Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.
Subject: 114 Physical sciences
Peer reviewed: Yes
Rights: cc_by
Usage restriction: openAccess
Self-archived version: publishedVersion


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