Charge collection in Si detectors irradiated in situ at superfluid helium temperature

Show full item record



Permalink

http://hdl.handle.net/10138/175980

Citation

Verbitskaya , E , Eremin , V , Zabrodskii , A , Dehning , B , Kurfuerst , C , Sapinski , M , Bartosik , M R , Egorov , N & Harkonen , J 2015 , ' Charge collection in Si detectors irradiated in situ at superfluid helium temperature ' , Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment , vol. 796 , pp. 118-125 . https://doi.org/10.1016/j.nima.2015.03.027

Title: Charge collection in Si detectors irradiated in situ at superfluid helium temperature
Author: Verbitskaya, Elena; Eremin, Vladimir; Zabrodskii, Andrei; Dehning, Bernd; Kurfuerst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R.; Egorov, Nicolai; Harkonen, Jaakko
Contributor: University of Helsinki, Helsinki Institute of Physics
Date: 2015-10-01
Language: eng
Number of pages: 8
Belongs to series: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
ISSN: 0168-9002
URI: http://hdl.handle.net/10138/175980
Abstract: Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1 x 10(16) p/cm(2). The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment. (C) 2015 Elsevier B.V. All rights reserved.
Subject: Large hadron collider
Beam loss monitoring
Radiation hardness
Charge collection
Superfluid helium
ELECTRIC-FIELD DISTRIBUTION
SILICON-DETECTORS
114 Physical sciences
Rights:


Files in this item

Total number of downloads: Loading...

Files Size Format View
1_s2.0_S0168900215003356_main.pdf 670.7Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record