Excitons in van der Waals materials : From monolayer to bulk hexagonal boron nitride

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Koskelo , J , Fugallo , G , Hakala , M , Gatti , M , Sottile , F & Cudazzo , P 2017 , ' Excitons in van der Waals materials : From monolayer to bulk hexagonal boron nitride ' , Physical Review B , vol. 95 , no. 3 , 035125 . https://doi.org/10.1103/PhysRevB.95.035125

Title: Excitons in van der Waals materials : From monolayer to bulk hexagonal boron nitride
Author: Koskelo, Jaakko; Fugallo, Giorgia; Hakala, Mikko; Gatti, Matteo; Sottile, Francesco; Cudazzo, Pierluigi
Contributor: University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
Date: 2017-01-17
Language: eng
Number of pages: 14
Belongs to series: Physical Review B
ISSN: 2469-9950
URI: http://hdl.handle.net/10138/179108
Abstract: We present a general picture of the exciton properties of layered materials in terms of the excitations of their single-layer building blocks. To this end, we derive a model excitonic Hamiltonian by drawing an analogy with molecular crystals, which are other prototypical van der Waals materials. We employ this simplified model to analyze in detail the excitation spectrum of hexagonal boron nitride (hBN) that we have obtained from the ab initio solution of the many-body Bethe-Salpeter equation as a function of momentum. In this way, we identify the character of the lowest-energy excitons in hBN, discuss the effects of the interlayer hopping and the electron-hole exchange interaction on the exciton dispersion, and illustrate the relation between exciton and plasmon excitations in layered materials.
Subject: DER-WAALS HETEROSTRUCTURES
ELECTRON-HOLE EXCITATIONS
AB-INITIO CALCULATION
2-DIMENSIONAL MATERIALS
OPTICAL-PROPERTIES
GREENS-FUNCTION
QUASI-PARTICLE
SEMICONDUCTORS
SPECTRA
INSULATORS
114 Physical sciences
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