Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

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dc.contributor.author Kukli, Kaupo
dc.contributor.author Kemell, Marianna
dc.contributor.author Vehkamäki, Marko
dc.contributor.author Heikkilä, Mikko J.
dc.contributor.author Mizohata, Kenichiro
dc.contributor.author Kalam, Kristjan
dc.contributor.author Ritala, Mikko
dc.contributor.author Leskelä, Markku
dc.contributor.author Kundrata, Ivan
dc.contributor.author Frohlich, Karol
dc.date.accessioned 2017-04-10T11:00:02Z
dc.date.available 2017-04-10T11:00:02Z
dc.date.issued 2017-02
dc.identifier.citation Kukli , K , Kemell , M , Vehkamäki , M , Heikkilä , M J , Mizohata , K , Kalam , K , Ritala , M , Leskelä , M , Kundrata , I & Frohlich , K 2017 , ' Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films ' , AIP Advances , vol. 7 , no. 2 , 025001 . https://doi.org/10.1063/1.4975928
dc.identifier.other PURE: 82679003
dc.identifier.other PURE UUID: 609c8336-36ff-4f33-b96f-e519d5c4c8af
dc.identifier.other WOS: 000395898800001
dc.identifier.other Scopus: 85011672608
dc.identifier.other ORCID: /0000-0002-3583-2064/work/40818252
dc.identifier.other ORCID: /0000-0002-6210-2980/work/31910945
dc.identifier.other ORCID: /0000-0003-1703-2247/work/31911023
dc.identifier.other ORCID: /0000-0002-6027-2089/work/44011643
dc.identifier.other ORCID: /0000-0001-5830-2800/work/32363831
dc.identifier.uri http://hdl.handle.net/10138/179111
dc.description.abstract Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 degrees C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resistive states were observed in Ta2O5 films mixed with relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2. (C) 2017 Author(s). en
dc.format.extent 15
dc.language.iso eng
dc.relation.ispartof AIP Advances
dc.rights cc_by
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject OXIDE THIN-FILMS
dc.subject RESISTIVE SWITCHING MEMORIES
dc.subject INSULATOR-METAL STRUCTURES
dc.subject TANTALUM OXIDE
dc.subject ORTHORHOMBIC ZIRCONIA
dc.subject DIELECTRIC-PROPERTIES
dc.subject TETRAGONAL ZIRCONIA
dc.subject RESISTANCE
dc.subject INTERFACE
dc.subject EPITAXY
dc.subject 114 Physical sciences
dc.subject 116 Chemical sciences
dc.title Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films en
dc.type Article
dc.contributor.organization Department of Chemistry
dc.contributor.organization Department of Physics
dc.contributor.organization Mikko Ritala / Principal Investigator
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1063/1.4975928
dc.relation.issn 2158-3226
dc.rights.accesslevel openAccess
dc.type.version publishedVersion

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