Transition-Metal-Doped NIR-Emitting Silicon Nanocrystals

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http://hdl.handle.net/10138/209588

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Chandra , S , Masuda , Y , Shirahata , N & Winnik , F M 2017 , ' Transition-Metal-Doped NIR-Emitting Silicon Nanocrystals ' , Angewandte Chemie (International Edition) , vol. 56 , no. 22 , pp. 6157-6160 . https://doi.org/10.1002/anie.201700436

Title: Transition-Metal-Doped NIR-Emitting Silicon Nanocrystals
Author: Chandra, Sourov; Masuda, Yoshitake; Shirahata, Naoto; Winnik, Francoise M.
Contributor organization: Department of Chemistry
Laboratory of Polymer Chemistry (-2016)
Drug Research Program
Polymers
Date: 2017-05-22
Language: eng
Number of pages: 4
Belongs to series: Angewandte Chemie (International Edition)
ISSN: 1433-7851
DOI: https://doi.org/10.1002/anie.201700436
URI: http://hdl.handle.net/10138/209588
Abstract: Impurity-doping in nanocrystals significantly affects their electronic properties and diversifies their applications. Herein, we report the synthesis of transition metal (Mn, Ni, Co, Cu)-doped oleophilic silicon nanocrystals (SiNCs) through hydrolysis/polymerization of triethoxysilane with acidic aqueous metal salt solutions, followed by thermal disproportionation of the resulting gel into a doped-Si/SiO2 composite that, upon HF etching and hydrosilylation with 1-n-octadecene, produces free-standing octadecyl-capped doped SiNCs (diameter approximate to 3 to 8 nm; dopant <0.2 atom %). Metal-doping triggers a red-shift of the SiNC photoluminescence (PL) of up to 270 nm, while maintaining high PL quantum yield (26% for Co doping).
Subject: doping
nanocrystals
photoluminescence
silicon
thermal disproportionation
QUANTUM DOTS
SEMICONDUCTOR NANOCRYSTALS
OPTICAL-PROPERTIES
PHOTOLUMINESCENCE
IMPURITIES
NANOPARTICLES
LUMINESCENCE
116 Chemical sciences
Peer reviewed: Yes
Rights: cc_by_nc_nd
Usage restriction: openAccess
Self-archived version: publishedVersion


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