Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing

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http://hdl.handle.net/10138/235427

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Mattinen , M , King , P J , Khriachtchev , L , Heikkilä , M J , Fleming , B , Rushworth , S , Mizohata , K , Meinander , K , Räisänen , J , Ritala , M & Leskelä , M 2018 , ' Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing ' , Materials today chemistry , vol. 9 , pp. 17-27 . https://doi.org/10.1016/j.mtchem.2018.04.005

Title: Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing
Author: Mattinen, Miika; King, Peter J.; Khriachtchev, Leonid; Heikkilä, Mikko J.; Fleming, Ben; Rushworth, Simon; Mizohata, Kenichiro; Meinander, Kristoffer; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku
Other contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry



Date: 2018-09
Language: eng
Number of pages: 11
Belongs to series: Materials today chemistry
ISSN: 2468-5194
DOI: https://doi.org/10.1016/j.mtchem.2018.04.005
URI: http://hdl.handle.net/10138/235427
Abstract: Molybdenum forms a range of oxides with different stoichiometries and crystal structures, which lead to different properties and performance in diverse applications. Herein, crystalline molybdenum oxide thin films with controlled phase composition are deposited by atomic layer deposition. The MoO2(thd)2 and O3 as precursors enable well-controlled growth of uniform and conformal films at 200–275 °C. The as-deposited films are rough and, in most cases, consist of a mixture of α- and β-MoO3 as well as an unidentified suboxide MoOx (2.75 ≤ x ≤ 2.89) phase. The phase composition can be tuned by changing deposition conditions. The film stoichiometry is close to MoO3 and the films are relatively pure, the main impurity being hydrogen (2–7 at-%), with ≤1 at-% of carbon and nitrogen. Post-deposition annealing is studied in situ by high-temperature X-ray diffraction in air, O2, N2, and forming gas (10% H2/90% N2) atmospheres. Phase-pure films of MoO2 and α-MoO3 are obtained by annealing at 450 °C in forming gas and O2, respectively. The ability to tailor the phase composition of MoOx films deposited by scalable atomic layer deposition method represents an important step towards various applications of molybdenum oxides.
Subject: Atomic layer deposition
Molybdenum oxide
MoO
Thin films
MoO2
REVERSIBLE LITHIUM STORAGE
MoO3
SELECTIVE OXIDATION
MOO3
RAMAN-SPECTROSCOPY
PHOTOCHROMISM
ELECTRODES
TEMPERATURE
GROWTH
PRECURSORS
CATALYSTS
116 Chemical sciences
114 Physical sciences
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