Kalam , K , Seemen , H , Mikkor , M , Ritslaid , P , Stern , R , Duenas , S , Castan , H , Tamm , A & Kukli , K 2018 , ' Electric and Magnetic Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films ' , ECS Journal of Solid State Science and Technology , vol. 7 , no. 9 , pp. N117-N122 . https://doi.org/10.1149/2.0041809jss
Title: | Electric and Magnetic Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films |
Author: | Kalam, Kristjan; Seemen, Helina; Mikkor, Mats; Ritslaid, Peeter; Stern, Raivo; Duenas, Salvador; Castan, Helena; Tamm, Aile; Kukli, Kaupo |
Contributor organization: | Department of Chemistry |
Date: | 2018-08-09 |
Language: | eng |
Number of pages: | 6 |
Belongs to series: | ECS Journal of Solid State Science and Technology |
ISSN: | 2162-8769 |
DOI: | https://doi.org/10.1149/2.0041809jss |
URI: | http://hdl.handle.net/10138/239083 |
Abstract: | Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirconia films were doped with hafnia and vice versa, and also nanolaminates were formed. All depositions were carried out at 300 degrees C. Most films were crystalline in their as-deposited state. Zirconia exhibited the metastable cubic and tetragonal phases by a large majority, whereas hafnia was mostly in its stable monoclinic phase. Magnetic and electrical properties of the films were assessed. Un-doped zirconia was ferromagnetic and this property diminished with increasing the amount of hafnia in a film. All films exhibited ferroelectric-like behavior and the polarization curves also changed with respect to the film composition. (C) The Author(s) 2018. Published by ECS. |
Subject: |
CHEMICAL-VAPOR-DEPOSITION
PULSED-LASER DEPOSITION OPTICAL-PROPERTIES HFO2 FILMS THERMAL-STABILITY BEAM EVAPORATION GATE DIELECTRICS SPRAY-PYROLYSIS OXIDE-FILMS WAVE-GUIDES 221 Nano-technology 116 Chemical sciences |
Peer reviewed: | Yes |
Rights: | cc_by |
Usage restriction: | openAccess |
Self-archived version: | publishedVersion |
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