Electric and Magnetic Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films

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http://hdl.handle.net/10138/239083

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Kalam , K , Seemen , H , Mikkor , M , Ritslaid , P , Stern , R , Duenas , S , Castan , H , Tamm , A & Kukli , K 2018 , ' Electric and Magnetic Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films ' , ECS Journal of Solid State Science and Technology , vol. 7 , no. 9 , pp. N117-N122 . https://doi.org/10.1149/2.0041809jss

Title: Electric and Magnetic Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films
Author: Kalam, Kristjan; Seemen, Helina; Mikkor, Mats; Ritslaid, Peeter; Stern, Raivo; Duenas, Salvador; Castan, Helena; Tamm, Aile; Kukli, Kaupo
Contributor: University of Helsinki, Department of Chemistry
Date: 2018-08-09
Language: eng
Number of pages: 6
Belongs to series: ECS Journal of Solid State Science and Technology
ISSN: 2162-8769
URI: http://hdl.handle.net/10138/239083
Abstract: Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirconia films were doped with hafnia and vice versa, and also nanolaminates were formed. All depositions were carried out at 300 degrees C. Most films were crystalline in their as-deposited state. Zirconia exhibited the metastable cubic and tetragonal phases by a large majority, whereas hafnia was mostly in its stable monoclinic phase. Magnetic and electrical properties of the films were assessed. Un-doped zirconia was ferromagnetic and this property diminished with increasing the amount of hafnia in a film. All films exhibited ferroelectric-like behavior and the polarization curves also changed with respect to the film composition. (C) The Author(s) 2018. Published by ECS.
Subject: CHEMICAL-VAPOR-DEPOSITION
PULSED-LASER DEPOSITION
OPTICAL-PROPERTIES
HFO2 FILMS
THERMAL-STABILITY
BEAM EVAPORATION
GATE DIELECTRICS
SPRAY-PYROLYSIS
OXIDE-FILMS
WAVE-GUIDES
221 Nano-technology
116 Chemical sciences
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