Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates

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http://hdl.handle.net/10138/246369

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Kukli , K , Kemell , M , Castan , H , Duenas , S , Seemen , H , Rähn , M , Link , J , Stern , R , Ritala , M & Leskelä , M 2018 , ' Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates ' , ECS Journal of Solid State Science and Technology , vol. 7 , no. 9 , pp. P501-P508 . https://doi.org/10.1149/2.0261809jss

Title: Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates
Author: Kukli, Kaupo; Kemell, Marianna; Castan, Helena; Duenas, Salvador; Seemen, Helina; Rähn, Mihkel; Link, Joosep; Stern, Raivo; Ritala, Mikko; Leskelä, Markku
Other contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry

Date: 2018-09-06
Language: eng
Number of pages: 8
Belongs to series: ECS Journal of Solid State Science and Technology
ISSN: 2162-8769
DOI: https://doi.org/10.1149/2.0261809jss
URI: http://hdl.handle.net/10138/246369
Abstract: Nanocrystalline HfO2:Al2O3 mixture films and nanolaminates were grown by atomic layer deposition at 350 degrees C from metal chloride precursors and water. Formation of metastable HfO2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window between low and high resistance states. (C) The Author(s) 2018. Published by ECS.
Subject: HFO2 THIN-FILMS
ELECTRICAL-PROPERTIES
DIELECTRIC-PROPERTIES
HAFNIUM OXIDE
MEMORY
116 Chemical sciences
221 Nano-technology
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