Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates

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Kukli , K , Kemell , M , Castan , H , Duenas , S , Seemen , H , Rähn , M , Link , J , Stern , R , Ritala , M & Leskelä , M 2018 , ' Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates ' , ECS Journal of Solid State Science and Technology , vol. 7 , no. 9 , pp. P501-P508 . https://doi.org/10.1149/2.0261809jss

Titel: Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates
Författare: Kukli, Kaupo; Kemell, Marianna; Castan, Helena; Duenas, Salvador; Seemen, Helina; Rähn, Mihkel; Link, Joosep; Stern, Raivo; Ritala, Mikko; Leskelä, Markku
Upphovmannens organisation: Department of Chemistry
Mikko Ritala / Principal Investigator
Datum: 2018-09-06
Språk: eng
Sidantal: 8
Tillhör serie: ECS Journal of Solid State Science and Technology
ISSN: 2162-8769
DOI: https://doi.org/10.1149/2.0261809jss
Permanenta länken (URI): http://hdl.handle.net/10138/246369
Abstrakt: Nanocrystalline HfO2:Al2O3 mixture films and nanolaminates were grown by atomic layer deposition at 350 degrees C from metal chloride precursors and water. Formation of metastable HfO2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window between low and high resistance states. (C) The Author(s) 2018. Published by ECS.
Subject: HFO2 THIN-FILMS
ELECTRICAL-PROPERTIES
DIELECTRIC-PROPERTIES
HAFNIUM OXIDE
MEMORY
116 Chemical sciences
221 Nano-technology
Referentgranskad: Ja
Licens: cc_by
Användningsbegränsning: openAccess
Parallelpublicerad version: publishedVersion


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