Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates

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dc.contributor.author Kukli, Kaupo
dc.contributor.author Kemell, Marianna
dc.contributor.author Castan, Helena
dc.contributor.author Duenas, Salvador
dc.contributor.author Seemen, Helina
dc.contributor.author Rähn, Mihkel
dc.contributor.author Link, Joosep
dc.contributor.author Stern, Raivo
dc.contributor.author Ritala, Mikko
dc.contributor.author Leskelä, Markku
dc.date.accessioned 2018-10-02T10:39:01Z
dc.date.available 2018-10-02T10:39:01Z
dc.date.issued 2018-09-06
dc.identifier.citation Kukli , K , Kemell , M , Castan , H , Duenas , S , Seemen , H , Rähn , M , Link , J , Stern , R , Ritala , M & Leskelä , M 2018 , ' Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates ' , ECS Journal of Solid State Science and Technology , vol. 7 , no. 9 , pp. P501-P508 . https://doi.org/10.1149/2.0261809jss
dc.identifier.other PURE: 116271696
dc.identifier.other PURE UUID: 3fb71447-f943-4641-8221-e326c92803d5
dc.identifier.other WOS: 000444108100001
dc.identifier.other ORCID: /0000-0002-3583-2064/work/48884932
dc.identifier.other ORCID: /0000-0002-6210-2980/work/48885046
dc.identifier.other Scopus: 85059940029
dc.identifier.other ORCID: /0000-0001-5830-2800/work/48884844
dc.identifier.uri http://hdl.handle.net/10138/246369
dc.description.abstract Nanocrystalline HfO2:Al2O3 mixture films and nanolaminates were grown by atomic layer deposition at 350 degrees C from metal chloride precursors and water. Formation of metastable HfO2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window between low and high resistance states. (C) The Author(s) 2018. Published by ECS. en
dc.format.extent 8
dc.language.iso eng
dc.relation.ispartof ECS Journal of Solid State Science and Technology
dc.rights cc_by
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject HFO2 THIN-FILMS
dc.subject ELECTRICAL-PROPERTIES
dc.subject DIELECTRIC-PROPERTIES
dc.subject HAFNIUM OXIDE
dc.subject MEMORY
dc.subject 116 Chemical sciences
dc.subject 221 Nano-technology
dc.title Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates en
dc.type Article
dc.contributor.organization Department of Chemistry
dc.contributor.organization Mikko Ritala / Principal Investigator
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1149/2.0261809jss
dc.relation.issn 2162-8769
dc.rights.accesslevel openAccess
dc.type.version publishedVersion

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