Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Films

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dc.contributor.author Väyrynen, Katja
dc.contributor.author Hatanpää, Timo
dc.contributor.author Mattinen, Miika
dc.contributor.author Heikkilä, Mikko
dc.contributor.author Mizohata, Kenichiro
dc.contributor.author Meinander, Kristoffer
dc.contributor.author Räisänen, Jyrki
dc.contributor.author Ritala, Mikko
dc.contributor.author Leskelä, Markku
dc.date.accessioned 2018-11-01T08:42:02Z
dc.date.available 2018-11-01T08:42:02Z
dc.date.issued 2018-05-22
dc.identifier.citation Väyrynen , K , Hatanpää , T , Mattinen , M , Heikkilä , M , Mizohata , K , Meinander , K , Räisänen , J , Ritala , M & Leskelä , M 2018 , ' Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Films ' , Chemistry of Materials , vol. 30 , no. 10 , pp. 3499-3507 . https://doi.org/10.1021/acs.chemmater.8b01271
dc.identifier.other PURE: 108236370
dc.identifier.other PURE UUID: f4f438b5-8eac-46fe-8034-e23784a4eda4
dc.identifier.other WOS: 000433403800036
dc.identifier.other Scopus: 85046710184
dc.identifier.other ORCID: /0000-0002-6210-2980/work/46037162
dc.identifier.other ORCID: /0000-0003-1703-2247/work/46037516
dc.identifier.other ORCID: /0000-0002-6027-2089/work/46037543
dc.identifier.other ORCID: /0000-0003-4837-1823/work/49416848
dc.identifier.other ORCID: /0000-0001-5830-2800/work/46037154
dc.identifier.other ORCID: /0000-0003-3745-8296/work/86937728
dc.identifier.uri http://hdl.handle.net/10138/256020
dc.description.abstract In this paper, we introduce a new Co precursor for the atomic layer deposition (ALD) of Co metal and other Co containing materials. CoCl2(TMEDA) (TMEDA = N,N,N ',N '-tetramethylethylenediamine) is a diamine adduct of cobalt(II) chloride that is inexpensive and easy to synthesize, making it an industrially viable precursor. Furthermore, CoCl2(TMEDA) shows good volatility at reasonably low temperatures and is thermally stable up to a temperature of, similar to 300 degrees C. We also present a full ALD study for the deposition of CoO thin films using CoCl2(TMEDA) and water as precursors. The process was investigated within a temperature range of 225-300 degrees C. Saturation of the film growth with respect to both precursor pulse lengths was verified. According to X-ray diffraction, the films were a mixture of hexagonal and cubic CoO. No reflections corresponding to Co3O4 were detected. The hexagonal phase is characteristic to nanomaterials only and is not seen in bulk CoO. The crystal structure of the films could be tuned by temperature, water pulse lengths, and type of substrate material. The films deposited at 275 degrees C exhibited 1:1 Co:O stoichiometry and very high purity. The CoO films could be reduced to Co metal at an exceptionally low temperature of 250 degrees C in 10% forming gas. Continuity of the reduced Co films was improved when the CoO film was deposited on TiN instead of native oxide terminated Si. The Co content of a 50 nm reduced metal film was as high as 95 at. %, with negligible amounts of oxygen and hydrogen. en
dc.format.extent 9
dc.language.iso eng
dc.relation.ispartof Chemistry of Materials
dc.rights unspecified
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject PLASMA ALD METHOD
dc.subject WATER OXIDATION
dc.subject BIS(N-TERT-BUTYL-N'-ETHYLPROPIONAMIDINATO) COBALT(II)
dc.subject CYCLOPENTADIENYLCOBALT DICARBONYL
dc.subject DICOBALT OCTACARBONYL
dc.subject TRANSITION-METALS
dc.subject CRYSTAL-STRUCTURE
dc.subject OXYGEN EVOLUTION
dc.subject COMPLEXES
dc.subject CO
dc.subject 116 Chemical sciences
dc.subject 114 Physical sciences
dc.subject 221 Nano-technology
dc.title Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Films en
dc.type Article
dc.contributor.organization Department of Chemistry
dc.contributor.organization Department of Physics
dc.contributor.organization Mikko Ritala / Principal Investigator
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1021/acs.chemmater.8b01271
dc.relation.issn 0897-4756
dc.rights.accesslevel openAccess
dc.type.version publishedVersion

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