Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

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Tamm , A , Kalam , K , Seemen , H , Kozlova , J , Kukli , K , Aarik , J , Link , J , Stern , R , Duenas , S & Castan , H 2017 , ' Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films ' , ACS Omega , vol. 2 , no. 12 , pp. 8836-8842 . https://doi.org/10.1021/acsomega.7b01394

Title: Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films
Author: Tamm, Aile; Kalam, Kristjan; Seemen, Helina; Kozlova, Jekaterina; Kukli, Kaupo; Aarik, Jaan; Link, Joosep; Stern, Raivo; Duenas, Salvador; Castan, Helena
Contributor: University of Helsinki, Department
Date: 2017-12
Language: eng
Number of pages: 7
Belongs to series: ACS Omega
ISSN: 2470-1343
URI: http://hdl.handle.net/10138/299106
Abstract: Mixed films of a high-permittivity oxide, Er2O3, and a magnetic material, Fe2O3, were grown by atomic layer deposition on silicon and titanium nitride at 375 degrees C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films.
Subject: ERFE2O4
GROWTH
116 Chemical sciences
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