Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

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Nanoscale Research Letters. 2019 Feb 12;14(1):55

Julkaisun nimi: Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
Tekijä: Zhu, Zhen; Sippola, Perttu; Ylivaara, Oili M E; Modanese, Chiara; Di Sabatino, Marisa; Mizohata, Kenichiro; Merdes, Saoussen; Lipsanen, Harri; Savin, Hele
Julkaisija: Springer US
Päiväys: 2019-02-12
URI: http://hdl.handle.net/10138/299138
Tiivistelmä: Abstract In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.
Avainsanat: Carbon dioxide
Silicon dioxide
Tekijänoikeustiedot: The Author(s).


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