Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Show simple item record

dc.contributor.author Zhu, Zhen
dc.contributor.author Sippola, Perttu
dc.contributor.author Ylivaara, Oili M E
dc.contributor.author Modanese, Chiara
dc.contributor.author Di Sabatino, Marisa
dc.contributor.author Mizohata, Kenichiro
dc.contributor.author Merdes, Saoussen
dc.contributor.author Lipsanen, Harri
dc.contributor.author Savin, Hele
dc.date.accessioned 2019-02-17T04:19:13Z
dc.date.available 2019-02-17T04:19:13Z
dc.date.issued 2019-02-12
dc.identifier.citation Nanoscale Research Letters. 2019 Feb 12;14(1):55
dc.identifier.uri http://hdl.handle.net/10138/299138
dc.description.abstract Abstract In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.
dc.publisher Springer US
dc.subject Carbon dioxide
dc.subject Silicon dioxide
dc.subject ALD
dc.subject Plasma
dc.subject Radicals
dc.subject Oxidation
dc.title Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
dc.date.updated 2019-02-17T04:19:13Z
dc.language.rfc3066 en
dc.rights.holder The Author(s).
dc.type.uri http://purl.org/eprint/entityType/ScholarlyWork
dc.type.uri http://purl.org/eprint/entityType/Expression
dc.type.uri http://purl.org/eprint/type/JournalArticle

Files in this item

Total number of downloads: Loading...

Files Size Format View
11671_2019_Article_2889.pdf 1.583Mb PDF View/Open

This item appears in the following Collection(s)

Show simple item record