Atomic Layer Deposition of PbI₂ Thin Films

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dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Materials Physics en
dc.contributor University of Helsinki, Department of Physics en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor.author Popov, Georgi
dc.contributor.author Mattinen, Miika Juhana
dc.contributor.author Hatanpää, Timo
dc.contributor.author Vehkamäki, Marko
dc.contributor.author Kemell, Marianna
dc.contributor.author Mizohata, Kenichiro
dc.contributor.author Räisänen, Jyrki
dc.contributor.author Ritala, Mikko
dc.contributor.author Leskelä, Markku
dc.date.accessioned 2019-03-14T09:49:02Z
dc.date.available 2019-03-14T09:49:02Z
dc.date.issued 2019-02-12
dc.identifier.citation Popov , G , Mattinen , M J , Hatanpää , T , Vehkamäki , M , Kemell , M , Mizohata , K , Räisänen , J , Ritala , M & Leskelä , M 2019 , ' Atomic Layer Deposition of PbI₂ Thin Films ' , Chemistry of Materials , vol. 31 , no. 3 , pp. 1101–1109 . https://doi.org/10.1021/acs.chemmater.8b04969 en
dc.identifier.issn 0897-4756
dc.identifier.other PURE: 122554772
dc.identifier.other PURE UUID: 04eda20d-e1b4-4845-bba1-f3c2b10e7794
dc.identifier.other Scopus: 85060512586
dc.identifier.other WOS: 000458937800053
dc.identifier.other ORCID: /0000-0002-3583-2064/work/55348836
dc.identifier.other ORCID: /0000-0003-1703-2247/work/55350004
dc.identifier.other ORCID: /0000-0003-4837-1823/work/55352511
dc.identifier.other ORCID: /0000-0002-6210-2980/work/55348911
dc.identifier.other ORCID: /0000-0001-5830-2800/work/55348789
dc.identifier.other ORCID: /0000-0003-3745-8296/work/86937757
dc.identifier.uri http://hdl.handle.net/10138/300099
dc.description.abstract Atomic layer deposition (ALD) enables the deposition of numerous materials in thin film form, yet there are no ALD processes for metal iodides. Herein, we demonstrate an ALD process for PbI2, a metal iodide with a two-dimensional (2D) structure that has applications in areas such as photo-detection and photovoltaics. This process uses lead silylamide Pb(btsa)(2) and SnI4 as precursors and works at temperatures below 90 degrees C, on a variety of starting surfaces and substrates such as polymers, metals, metal sulfides, and oxides. The starting surface defines the crystalline texture and morphology of the PbI2 films. Rough substrates yield porous PbI2 films with randomly oriented 2D layers, whereas smooth substrates yield dense films with 2D layers parallel to the substrate surface. Exposure to light increases conductivity of the ALD PbI2 films which enables their use in photodetectors. The films can be converted into a CH3NH3PbI3 halide perovskite, an important solar cell absorber material. For various applications, ALD offers advantages such as ability to uniformly coat large areas and simple means to control film thickness. We anticipate that the chemistry exploited in the PbI2 ALD process is also applicable for ALD of other metal halides. en
dc.format.extent 9
dc.language.iso eng
dc.relation.ispartof Chemistry of Materials
dc.rights en
dc.subject AL2O3 en
dc.subject ENERGY en
dc.subject LEAD IODIDE en
dc.subject OPTICAL-CONSTANTS en
dc.subject PEROVSKITE SOLAR-CELLS en
dc.subject 114 Physical sciences en
dc.subject 116 Chemical sciences en
dc.title Atomic Layer Deposition of PbI₂ Thin Films en
dc.type Article
dc.description.version Peer reviewed
dc.identifier.doi https://doi.org/10.1021/acs.chemmater.8b04969
dc.type.uri info:eu-repo/semantics/other
dc.type.uri info:eu-repo/semantics/publishedVersion
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