Atomistic simulation of ion irradiation of semiconductor heterostructures

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Fridlund , C , Laakso , J , Nordlund , K & Djurabekova , F 2017 , ' Atomistic simulation of ion irradiation of semiconductor heterostructures ' , Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms , vol. 409 , pp. 14-18 . https://doi.org/10.1016/j.nimb.2017.04.034

Title: Atomistic simulation of ion irradiation of semiconductor heterostructures
Author: Fridlund, Christoffer; Laakso, Jarno; Nordlund, Kai; Djurabekova, Flyura
Contributor organization: Department of Physics
Helsinki Institute of Physics
Date: 2017-10-18
Language: eng
Number of pages: 5
Belongs to series: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
ISSN: 0168-583X
DOI: https://doi.org/10.1016/j.nimb.2017.04.034
URI: http://hdl.handle.net/10138/300209
Abstract: Recently the possibility to use ion beam mixing combined with suitable annealing has been suggested as a possible means to synthesize individual silicon quantum dots in a silica layer, with the possibility to function as single-electron transistors. For this to work, it is necessary to have a careful control of the ion beam mixing in Si/SiO2/Si heterostructures, as well as understand the nature of not only the composition, but also the chemical modification of the SiO2 layer by the mixing with Si. We describe here a procedure to synthesize Si/SiO2/Si heterostructures in molecular dynamics, with an energy minimization scheme to create strong and stable interfaces. The created heterostructures are irradiated at energies and fluences matching corresponding experiments. The results show a considerable degree of interface mixing, as expected. They also show some densification of the silica layer due to recoil implantation, and formation of a considerable number of coordination defects. Due to the strong covalent bonding in silicon and silica, the densification is not fully elastically relaxed even in the presence of a nearby surface.
Description: Host publication title: Proceedings of the 20th International Conference on Ion Beam Modification of Materials (IBMM 2016) Proceeding volume: 409
Subject: 114 Physical sciences
Peer reviewed: Yes
Rights: cc_by_nc_nd
Usage restriction: openAccess
Self-archived version: acceptedVersion


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