Direct observation of mono-vacancy and self-interstitial recovery in tungsten

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Pysyväisosoite

http://hdl.handle.net/10138/300408

Lähdeviite

Heikinheimo , J , Mizohata , K , Räisänen , J , Ahlgren , T , Jalkanen , P , Lahtinen , A , Catarino , N , Alves , E & Tuomisto , F 2019 , ' Direct observation of mono-vacancy and self-interstitial recovery in tungsten ' , Physical Review Materials , vol. 7 , no. 2 , 021103 . https://doi.org/10.1063/1.5082150

Julkaisun nimi: Direct observation of mono-vacancy and self-interstitial recovery in tungsten
Tekijä: Heikinheimo, J.; Mizohata, K.; Räisänen, J.; Ahlgren, T.; Jalkanen, P.; Lahtinen, A.; Catarino, N.; Alves, E.; Tuomisto, Filip
Muu tekijä: University of Helsinki, Materials Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
University of Helsinki, Materials Physics
University of Helsinki, Materials Physics
University of Helsinki, Aalto University
Päiväys: 2019-02
Kieli: eng
Sivumäärä: 5
Kuuluu julkaisusarjaan: Physical Review Materials
ISSN: 2166-532X
URI: http://hdl.handle.net/10138/300408
Tiivistelmä: Reliable and accurate knowledge of the physical properties of elementary point defects is crucial for predictive modeling of the evolution of radiation damage in materials employed in harsh conditions. We have applied positron annihilation spectroscopy to directly detect mono-vacancy defects created in tungsten through particle irradiation at cryogenic temperatures, as well as their recovery kinetics. We find that efficient self-healing of the primary damage takes place through Frenkel pair recombination already at 35 K, in line with an upper bound of 0.1 eV for the migration barrier of self-interstitials. Further self-interstitial migration is observed above 50 K with activation energies in the range of 0.12-0.42 eV through the release of the self-interstitial atoms from impurities and structural defects and following recombination with mono-vacancies. Mono-vacancy migration is activated at around 550 K with a migration barrier of E-m(V) = 1.85 +/- 0.05 eV. (C) 2019 Author(s).
Avainsanat: IRRADIATION-INDUCED DEFECTS
POSITRON-ANNIHILATION
MIGRATION
BEHAVIOR
ENERGY
ATOMS
114 Physical sciences
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