Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge

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Ganti , S , King , P J , Arac , E , Dawson , K , Heikkilä , M J , Quilter , J H , Murdoch , B , Cumpson , P & O'Neill , A 2017 , ' Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge ' , ACS Applied Materials & Interfaces , vol. 9 , no. 33 , pp. 27357-27364 . https://doi.org/10.1021/acsami.7b06595

Title: Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge
Author: Ganti, Srinivas; King, Peter J.; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J.; Quilter, John H.; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony
Contributor organization: Department of Chemistry
Date: 2017-08-23
Language: eng
Number of pages: 8
Belongs to series: ACS Applied Materials & Interfaces
ISSN: 1944-8244
DOI: https://doi.org/10.1021/acsami.7b06595
URI: http://hdl.handle.net/10138/301189
Abstract: We introduce a new approach to creating low-resistance metalsemiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5x improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metalsemiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.
Subject: hot carriers
voltage controlled
island metal film
ambipolar contact
Au-Ge
Ohmic
ballistic emission
heteroepitaxy
ELECTRON-EMISSION MICROSCOPY
GERMANIUM SURFACES
THIN-FILMS
NANOPARTICLES
GROWTH
116 Chemical sciences
114 Physical sciences
221 Nano-technology
216 Materials engineering
Peer reviewed: Yes
Rights: cc_by
Usage restriction: openAccess
Self-archived version: publishedVersion


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