Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing

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Mattinen , M , Hatanpää , T , King , P J , Meinander , K , Mizohata , K , Jalkanen , P , Räisänen , J , Ritala , M & Leskelä , M 2019 , ' Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 37 , no. 2 , 020921 . https://doi.org/10.1116/1.5074153

Title: Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing
Author: Mattinen, Miika; Hatanpää, Timo; King, Peter J.; Meinander, Kristoffer; Mizohata, Kenichiro; Jalkanen, Pasi; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Materials Physics
University of Helsinki, Materials Physics
University of Helsinki, Department of Physics
University of Helsinki, Mikko Ritala / Principal Investigator
University of Helsinki, Materials Physics
Date: 2019-03
Language: eng
Number of pages: 9
Belongs to series: Journal of vacuum science & technology : an official journal of the American Vacuum Society
ISSN: 0734-2101
URI: http://hdl.handle.net/10138/301610
Abstract: Tungsten disulfide (WS2) is a semiconducting 2D material, which is gaining increasing attention in the wake of graphene and MoS2 owing to its exciting properties and promising performance in a multitude of applications. Herein, the authors deposited WSx thin films by atomic layer deposition using W-2(NMe2)(6) and H2S as precursors. The films deposited at 150 degrees C were amorphous and sulfur deficient. The amorphous films crystallized as WS2 by mild postdeposition annealing in H2S/N-2 atmosphere at 400 degrees C. Detailed structural characterization using Raman spectroscopy, x-ray diffraction, and transmission electron microscopy revealed that the annealed films consisted of small (
Subject: TRANSITION-METAL DICHALCOGENIDES
2-DIMENSIONAL MATERIALS
WAFER-SCALE
WS2 LAYERS
DISULFIDE
GROWTH
MONOLAYER
PRECURSOR
PERFORMANCE
NANOSHEETS
114 Physical sciences
221 Nano-technology
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