Atomic Layer Deposition of Crystalline MoS2 Thin Films : New Molybdenum Precursor for Low-Temperature Film Growth

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Mattinen , M , Hatanpaa , T , Sarnet , T , Mizohata , K , Meinander , K , King , P J , Khriachtchev , L , Räisänen , J , Ritala , M & Leskelä , M 2017 , ' Atomic Layer Deposition of Crystalline MoS2 Thin Films : New Molybdenum Precursor for Low-Temperature Film Growth ' , Advanced Materials Interfaces , vol. 4 , no. 18 , 1700123 . https://doi.org/10.1002/admi.201700123

Title: Atomic Layer Deposition of Crystalline MoS2 Thin Films : New Molybdenum Precursor for Low-Temperature Film Growth
Author: Mattinen, Miika; Hatanpaa, Timo; Sarnet, Tiina; Mizohata, Kenichiro; Meinander, Kristoffer; King, Peter J.; Khriachtchev, Leonid; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku
Contributor organization: Department of Chemistry
Department of Physics
Mikko Ritala / Principal Investigator
Date: 2017-09-22
Language: eng
Number of pages: 11
Belongs to series: Advanced Materials Interfaces
ISSN: 2196-7350
DOI: https://doi.org/10.1002/admi.201700123
URI: http://hdl.handle.net/10138/301614
Abstract: Molybdenum disulfide (MoS2) is a semiconducting 2D material, which has evoked wide interest due to its unique properties. However, the lack of controlled and scalable methods for the production of MoS2 films at low temperatures remains a major hindrance on its way to applications. In this work, atomic layer deposition (ALD) is used to deposit crystalline MoS2 thin films at a relatively low temperature of 300 degrees C. A new molybdenum precursor, Mo(thd)(3) (thd = 2,2,6,6-tetramethylheptane-3,5-dionato), is synthesized, characterized, and used for film deposition with H2S as the sulfur precursor. Self-limiting growth with a low growth rate of approximate to 0.025 angstrom cycle(-1), straightforward thickness control, and large-area uniformity are demonstrated. Film crystallinity is found to be relatively good considering the low deposition temperature, but the films have significant surface roughness. Additionally, chemical composition as well as optical and wetting properties are evaluated. MoS2 films are deposited on a variety of substrates, which reveal notable differences in growth rate, surface morphology, and crystallinity. The growth of crystalline MoS2 films at comparably low temperatures by ALD contributes toward the use of MoS2 for applications with a limited thermal budget.
Subject: 2D materials
atomic layer deposition
MoS2
thin films
TRANSITION-METAL DICHALCOGENIDES
CHEMICAL-VAPOR-DEPOSITION
ELECTROCHEMICAL HYDROGEN EVOLUTION
2-DIMENSIONAL MATERIALS
VALLEY POLARIZATION
WAFER-SCALE
IN-SITU
SULFIDE
MONOLAYER
RAMAN
116 Chemical sciences
114 Physical sciences
Peer reviewed: Yes
Usage restriction: openAccess
Self-archived version: acceptedVersion


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