Mattinen , M , King , P J , Khriachtchev , L , Meinander , K , Gibbon , J T , Dhanak , V R , Räisänen , J , Ritala , M & Leskelä , M 2018 , ' Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films ' , Small , vol. 14 , no. 21 , 1800547 . https://doi.org/10.1002/smll.201800547
Title: | Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films |
Author: | Mattinen, Miika; King, Peter J.; Khriachtchev, Leonid; Meinander, Kristoffer; Gibbon, James T.; Dhanak, Vin R.; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku |
Contributor organization: | Department of Chemistry Department of Physics Mikko Ritala / Principal Investigator |
Date: | 2018-05-24 |
Language: | eng |
Number of pages: | 8 |
Belongs to series: | Small |
ISSN: | 1613-6810 |
DOI: | https://doi.org/10.1002/smll.201800547 |
URI: | http://hdl.handle.net/10138/302076 |
Abstract: | Semiconducting 2D materials, such as SnS2, hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS2 films has remained a great challenge. Herein, continuous wafer-scale 2D SnS2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 degrees C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS2 films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors. |
Subject: |
2d materials
atomic layer deposition semiconductors SnS2 thin films CHEMICAL-VAPOR-DEPOSITION TRANSITION-METAL DICHALCOGENIDES ATOMIC LAYER DEPOSITION SINGLE-CRYSTAL SNS2 MOLYBDENUM-DISULFIDE GROWTH TRANSISTORS NANOSHEETS MOS2 116 Chemical sciences 114 Physical sciences 221 Nano-technology |
Peer reviewed: | Yes |
Usage restriction: | openAccess |
Self-archived version: | acceptedVersion |
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