Atomic Layer Deposition of Photoconductive Cu2O Thin Films

Show full item record



Permalink

http://hdl.handle.net/10138/304671

Citation

Iivonen , T , Heikkilä , M J , Popov , G , Nieminen , H-E , Kaipio , M , Kemell , M , Mattinen , M , Meinander , K , Mizohata , K , Räisänen , J , Ritala , M & Leskelä , M 2019 , ' Atomic Layer Deposition of Photoconductive Cu2O Thin Films ' , ACS Omega , vol. 4 , no. 6 , pp. 11205-11214 . https://doi.org/10.1021/acsomega.9b01351

Title: Atomic Layer Deposition of Photoconductive Cu2O Thin Films
Author: Iivonen, Tomi; Heikkilä, Mikko J.; Popov, Georgi; Nieminen, Heta-Elisa; Kaipio, Mikko; Kemell, Marianna; Mattinen, Miika; Meinander, Kristoffer; Mizohata, Kenichiro; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku
Other contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry



Date: 2019-06
Language: eng
Number of pages: 10
Belongs to series: ACS Omega
ISSN: 2470-1343
DOI: https://doi.org/10.1021/acsomega.9b01351
URI: http://hdl.handle.net/10138/304671
Abstract: Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)(2)] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycrystalline, and impurity-free Cu2O thin films at temperatures of 180-220 degrees C. The deposition of Cu(I) oxide films from a Cu(II) precursor without the use of a reducing agent is explained by the thermally induced reduction of Cu(OAc)(2) to the volatile copper(I) acetate, CuOAc. In addition to the optimization of ALD process parameters and characterization of film properties, we studied the Cu2O films in the fabrication of photoconductor devices. Our proof-of-concept devices show that approx- imately 20 nm thick Cu2O films can be used for photodetection in the visible wavelength range and that the thin film photoconductors exhibit improved device characteristics in comparison to bulk Cu2O crystals.
Subject: CHEMICAL-VAPOR-DEPOSITION
X-RAY
THERMAL-DECOMPOSITION
CUPROUS-OXIDE
ELECTRONIC-STRUCTURE
OPTICAL-CONSTANTS
COPPER
CONDUCTION
SUBSTRATE
OXIDATION
116 Chemical sciences
114 Physical sciences
221 Nano-technology
Rights:


Files in this item

Total number of downloads: Loading...

Files Size Format View
acsomega.9b01351.pdf 4.791Mb PDF View/Open

This item appears in the following Collection(s)

Show full item record