Atomic Layer Deposition of Photoconductive Cu2O Thin Films

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Iivonen , T , Heikkilä , M J , Popov , G , Nieminen , H-E , Kaipio , M , Kemell , M , Mattinen , M , Meinander , K , Mizohata , K , Räisänen , J , Ritala , M & Leskelä , M 2019 , ' Atomic Layer Deposition of Photoconductive Cu2O Thin Films ' , ACS Omega , vol. 4 , no. 6 , pp. 11205-11214 .

Title: Atomic Layer Deposition of Photoconductive Cu2O Thin Films
Author: Iivonen, Tomi; Heikkilä, Mikko J.; Popov, Georgi; Nieminen, Heta-Elisa; Kaipio, Mikko; Kemell, Marianna; Mattinen, Miika; Meinander, Kristoffer; Mizohata, Kenichiro; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku
Contributor organization: Department of Chemistry
Materials Physics
Department of Physics
Mikko Ritala / Principal Investigator
Date: 2019-06
Language: eng
Number of pages: 10
Belongs to series: ACS Omega
ISSN: 2470-1343
Abstract: Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)(2)] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycrystalline, and impurity-free Cu2O thin films at temperatures of 180-220 degrees C. The deposition of Cu(I) oxide films from a Cu(II) precursor without the use of a reducing agent is explained by the thermally induced reduction of Cu(OAc)(2) to the volatile copper(I) acetate, CuOAc. In addition to the optimization of ALD process parameters and characterization of film properties, we studied the Cu2O films in the fabrication of photoconductor devices. Our proof-of-concept devices show that approx- imately 20 nm thick Cu2O films can be used for photodetection in the visible wavelength range and that the thin film photoconductors exhibit improved device characteristics in comparison to bulk Cu2O crystals.
116 Chemical sciences
114 Physical sciences
221 Nano-technology
Peer reviewed: Yes
Rights: cc_by
Usage restriction: openAccess
Self-archived version: publishedVersion

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