Atomic Layer Deposition of Photoconductive Cu2O Thin Films

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dc.contributor.author Iivonen, Tomi
dc.contributor.author Heikkilä, Mikko J.
dc.contributor.author Popov, Georgi
dc.contributor.author Nieminen, Heta-Elisa
dc.contributor.author Kaipio, Mikko
dc.contributor.author Kemell, Marianna
dc.contributor.author Mattinen, Miika
dc.contributor.author Meinander, Kristoffer
dc.contributor.author Mizohata, Kenichiro
dc.contributor.author Räisänen, Jyrki
dc.contributor.author Ritala, Mikko
dc.contributor.author Leskelä, Markku
dc.date.accessioned 2019-08-16T08:44:01Z
dc.date.available 2019-08-16T08:44:01Z
dc.date.issued 2019-06
dc.identifier.citation Iivonen , T , Heikkilä , M J , Popov , G , Nieminen , H-E , Kaipio , M , Kemell , M , Mattinen , M , Meinander , K , Mizohata , K , Räisänen , J , Ritala , M & Leskelä , M 2019 , ' Atomic Layer Deposition of Photoconductive Cu2O Thin Films ' , ACS Omega , vol. 4 , no. 6 , pp. 11205-11214 . https://doi.org/10.1021/acsomega.9b01351
dc.identifier.other PURE: 126169163
dc.identifier.other PURE UUID: c6178988-e217-4566-bc09-978085ffaa6b
dc.identifier.other WOS: 000473361500185
dc.identifier.other ORCID: /0000-0002-3583-2064/work/60609201
dc.identifier.other ORCID: /0000-0003-1703-2247/work/60610223
dc.identifier.other ORCID: /0000-0002-6027-2089/work/60611184
dc.identifier.other ORCID: /0000-0003-4837-1823/work/60612684
dc.identifier.other ORCID: /0000-0003-2595-4540/work/60613672
dc.identifier.other ORCID: /0000-0001-5830-2800/work/61591589
dc.identifier.other ORCID: /0000-0002-6210-2980/work/60609237
dc.identifier.other ORCID: /0000-0003-1361-3829/work/80578689
dc.identifier.uri http://hdl.handle.net/10138/304671
dc.description.abstract Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)(2)] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycrystalline, and impurity-free Cu2O thin films at temperatures of 180-220 degrees C. The deposition of Cu(I) oxide films from a Cu(II) precursor without the use of a reducing agent is explained by the thermally induced reduction of Cu(OAc)(2) to the volatile copper(I) acetate, CuOAc. In addition to the optimization of ALD process parameters and characterization of film properties, we studied the Cu2O films in the fabrication of photoconductor devices. Our proof-of-concept devices show that approx- imately 20 nm thick Cu2O films can be used for photodetection in the visible wavelength range and that the thin film photoconductors exhibit improved device characteristics in comparison to bulk Cu2O crystals. en
dc.format.extent 10
dc.language.iso eng
dc.relation.ispartof ACS Omega
dc.rights cc_by
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject CHEMICAL-VAPOR-DEPOSITION
dc.subject X-RAY
dc.subject THERMAL-DECOMPOSITION
dc.subject CUPROUS-OXIDE
dc.subject ELECTRONIC-STRUCTURE
dc.subject OPTICAL-CONSTANTS
dc.subject COPPER
dc.subject CONDUCTION
dc.subject SUBSTRATE
dc.subject OXIDATION
dc.subject 116 Chemical sciences
dc.subject 114 Physical sciences
dc.subject 221 Nano-technology
dc.title Atomic Layer Deposition of Photoconductive Cu2O Thin Films en
dc.type Article
dc.contributor.organization Department of Chemistry
dc.contributor.organization Materials Physics
dc.contributor.organization Department of Physics
dc.contributor.organization Mikko Ritala / Principal Investigator
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1021/acsomega.9b01351
dc.relation.issn 2470-1343
dc.rights.accesslevel openAccess
dc.type.version publishedVersion

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