Nickel Germanide Thin Films by Atomic Layer Deposition

Show full item record



Permalink

http://hdl.handle.net/10138/304806

Citation

Väyrynen , K , Vihervaara , A , Hatanpää , T , Mattinen , M , Heikkilä , M J , Mizohata , K , Raisanen , J , Ritala , M & Leskelä , M 2019 , ' Nickel Germanide Thin Films by Atomic Layer Deposition ' , Chemistry of Materials , vol. 31 , no. 14 , pp. 5314-5319 . https://doi.org/10.1021/acs.chemmater.9b01877

Title: Nickel Germanide Thin Films by Atomic Layer Deposition
Author: Väyrynen, Katja; Vihervaara, Anton; Hatanpää, Timo; Mattinen, Miika; Heikkilä, Mikko J.; Mizohata, Kenichiro; Raisanen, Jyrki; Ritala, Mikko; Leskelä, Markku
Contributor: University of Helsinki, Department
University of Helsinki, Department
University of Helsinki, Department
University of Helsinki, Department
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2019-07-23
Language: eng
Number of pages: 6
Belongs to series: Chemistry of Materials
ISSN: 0897-4756
URI: http://hdl.handle.net/10138/304806
Abstract: This work presents preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (ALD). The films were grown using NiCl2(tmpda) (tmpda = N,N,N',N',-tetramethyl-1,3-propanediamine) and tributylgermanium hydride serving as a new, efficient reducing agent. This is the first time ALD NixGey films are prepared directly upon the combination of two precursors and without any annealing treatment. NixGey is an important contact material for enabling Ge-based transistors and thus circumventing the scaling issues related to current microelectronics. The Ni2Ge process was examined at low temperatures of 160-200 degrees C. Self-limiting, saturative growth with a high growth rate of 0.91 angstrom/cycle was observed at 180 degrees C. The films were thoroughly analyzed in terms of morphology, crystallinity, composition, and resistivity. The Ni2Ge films were pure, with the sum of contaminants being less than 1 at. %. Owing to their high purity, the films exhibited low resistivity, suggesting suitability for contact applications.
Subject: RESISTIVITY
COBALT(II)
SILICIDES
COMPLEXES
116 Chemical sciences
Rights:


Files in this item

Total number of downloads: Loading...

Files Size Format View
acs.chemmater.9b01877.pdf 2.772Mb PDF View/Open

This item appears in the following Collection(s)

Show full item record