Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments

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Włodarski, M.; Chodorow, U.; Jóźwiak, S.; Putkonen, M.; Durejko, T.; Sajavaara, T.; Norek, M. Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments. Materials 2019, 12, 3212.

Title: Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments
Author: Włodarski, Maksymilian; Chodorow, Urszula; Jóźwiak, Stanisław; Putkonen, Matti; Durejko, Tomasz; Sajavaara, Timo; Norek, Małgorzata
Publisher: Multidisciplinary Digital Publishing Institute
Date: 2019-09-30
URI: http://hdl.handle.net/10138/305967
Abstract: The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge;400 &deg;C and annealing time &ge;2 h, and 1:1 stoichiometry was obtained when annealed at 500 &deg;C for 4 h. ZnS crystallized into small crystallites (1&ndash;7 nm) with cubic sphalerite structure, which remained stable under the applied annealing conditions. The size of the crystallites (<i>D</i>) tended to decrease with annealing temperature, in agreement with the EDS data (decreased content of both S and Zn with annealing temperature); the <i>D</i> for samples annealed at 600 &deg;C (for the time &le;2 h) was always the smallest. Both reflectivity and ellipsometric spectra showed characteristics typical for quantum confinement (distinct dips/peaks in UV spectral region). It can thus be concluded that the amorphous ZnS layer obtained at a relatively low temperature (150 &deg;C) from organic S precursor transformed into the layers built of small ZnS nanocrystals of cubic structure after annealing at a temperature range of 300&ndash;600 &deg;C under Ar atmosphere.


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