Defect identification in semiconductors with positron annihilation: Experiment and theory

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Tuomisto , F & Makkonen , I 2013 , ' Defect identification in semiconductors with positron annihilation: Experiment and theory ' , Reviews of Modern Physics , vol. 85 , no. 4 , pp. 1583-1631 . https://doi.org/10.1103/RevModPhys.85.1583

Titel: Defect identification in semiconductors with positron annihilation: Experiment and theory
Författare: Tuomisto, Filip; Makkonen, Ilja
Upphovmannens organisation: Helsinki Institute of Physics
Datum: 2013-11-14
Språk: eng
Sidantal: 49
Tillhör serie: Reviews of Modern Physics
ISSN: 0034-6861
DOI: https://doi.org/10.1103/RevModPhys.85.1583
Permanenta länken (URI): http://hdl.handle.net/10138/306582
Subject: MOLECULAR-BEAM EPITAXY
ELECTRONIC-STRUCTURE CALCULATIONS
DENSITY-FUNCTIONAL THEORY
TEMPERATURE-GROWN GAAS
ARSENIC-DOPED SILICON
AUGMENTED-WAVE METHOD
VACANCY-TYPE DEFECTS
2-DIMENSIONAL ANGULAR-CORRELATION
NORM-CONSERVING PSEUDOPOTENTIALS
PERIODIC BOUNDARY-CONDITIONS
114 Physical sciences
Referentgranskad: Ja
Användningsbegränsning: openAccess
Parallelpublicerad version: publishedVersion


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