Defect identification in semiconductors with positron annihilation: Experiment and theory

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dc.contributor.author Tuomisto, Filip
dc.contributor.author Makkonen, Ilja
dc.date.accessioned 2019-10-31T10:16:18Z
dc.date.available 2019-10-31T10:16:18Z
dc.date.issued 2013-11-14
dc.identifier.citation Tuomisto , F & Makkonen , I 2013 , ' Defect identification in semiconductors with positron annihilation: Experiment and theory ' , Reviews of Modern Physics , vol. 85 , no. 4 , pp. 1583-1631 . https://doi.org/10.1103/RevModPhys.85.1583
dc.identifier.other PURE: 32628358
dc.identifier.other PURE UUID: f68288aa-0da7-4438-85ea-989ff9248238
dc.identifier.other WOS: 000327247800001
dc.identifier.other Scopus: 84889658459
dc.identifier.other ORCID: /0000-0003-4134-8428/work/65677774
dc.identifier.other ORCID: /0000-0002-6913-5654/work/65677813
dc.identifier.uri http://hdl.handle.net/10138/306582
dc.format.extent 49
dc.language.iso eng
dc.relation.ispartof Reviews of Modern Physics
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject MOLECULAR-BEAM EPITAXY
dc.subject ELECTRONIC-STRUCTURE CALCULATIONS
dc.subject DENSITY-FUNCTIONAL THEORY
dc.subject TEMPERATURE-GROWN GAAS
dc.subject ARSENIC-DOPED SILICON
dc.subject AUGMENTED-WAVE METHOD
dc.subject VACANCY-TYPE DEFECTS
dc.subject 2-DIMENSIONAL ANGULAR-CORRELATION
dc.subject NORM-CONSERVING PSEUDOPOTENTIALS
dc.subject PERIODIC BOUNDARY-CONDITIONS
dc.subject 114 Physical sciences
dc.title Defect identification in semiconductors with positron annihilation: Experiment and theory en
dc.type Review Article
dc.contributor.organization Helsinki Institute of Physics
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1103/RevModPhys.85.1583
dc.relation.issn 0034-6861
dc.rights.accesslevel openAccess
dc.type.version publishedVersion

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