As2S3 thin films deposited by atomic layer deposition

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Färm , E , Heikkilä , M J , Vehkamäki , M , Mizohata , K , Ritala , M , Leskelä , M & Kemell , M 2017 , ' As2S3 thin films deposited by atomic layer deposition ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 35 , no. 1 , 01B114 . https://doi.org/10.1116/1.4968202

Title: As2S3 thin films deposited by atomic layer deposition
Author: Färm, Elina; Heikkilä, Mikko J.; Vehkamäki, Marko; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna
Contributor organization: Department of Chemistry
Department of Physics
Materials Physics
Mikko Ritala / Principal Investigator
Date: 2017-01
Language: eng
Number of pages: 7
Belongs to series: Journal of vacuum science & technology : an official journal of the American Vacuum Society
ISSN: 0734-2101
DOI: https://doi.org/10.1116/1.4968202
URI: http://hdl.handle.net/10138/307031
Abstract: As2S3 thin films were deposited on glass and silicon (100) substrates by atomic layer deposition from tris(dimethylamino) arsine [(CH3)(2)N)(3)As] and H2S. Amorphous films were deposited at an exceptionally low temperature of 50 degrees C. No film growth was observed at higher temperatures. The films were amorphous and contained H and C as the main impurities. The refractive index was 2.3 at 1.0 mu m. The films were sensitive to air humidity, but their stability was significantly improved by a protective Al2O3 layer. (C) 2016 American Vacuum Society.
Subject: CHEMICAL-VAPOR-DEPOSITION
ARSENIC SULFIDE
OPTICAL CHARACTERIZATION
WAVE-GUIDES
114 Physical sciences
116 Chemical sciences
Peer reviewed: Yes
Rights: unspecified
Usage restriction: openAccess
Self-archived version: acceptedVersion


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