As2S3 thin films deposited by atomic layer deposition

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Färm , E , Heikkilä , M J , Vehkamäki , M , Mizohata , K , Ritala , M , Leskelä , M & Kemell , M 2017 , ' As2S3 thin films deposited by atomic layer deposition ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 35 , no. 1 , 01B114 . https://doi.org/10.1116/1.4968202

Title: As2S3 thin films deposited by atomic layer deposition
Author: Färm, Elina; Heikkilä, Mikko J.; Vehkamäki, Marko; Mizohata, Kenichiro; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna
Other contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry



Date: 2017-01
Language: eng
Number of pages: 7
Belongs to series: Journal of vacuum science & technology : an official journal of the American Vacuum Society
ISSN: 0734-2101
DOI: https://doi.org/10.1116/1.4968202
URI: http://hdl.handle.net/10138/307031
Abstract: As2S3 thin films were deposited on glass and silicon (100) substrates by atomic layer deposition from tris(dimethylamino) arsine [(CH3)(2)N)(3)As] and H2S. Amorphous films were deposited at an exceptionally low temperature of 50 degrees C. No film growth was observed at higher temperatures. The films were amorphous and contained H and C as the main impurities. The refractive index was 2.3 at 1.0 mu m. The films were sensitive to air humidity, but their stability was significantly improved by a protective Al2O3 layer. (C) 2016 American Vacuum Society.
Subject: CHEMICAL-VAPOR-DEPOSITION
ARSENIC SULFIDE
OPTICAL CHARACTERIZATION
WAVE-GUIDES
114 Physical sciences
116 Chemical sciences
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