Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

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Peltola , T , Eremin , V , Verbitskaya , E & Härkönen , J 2017 , ' Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection ' , Journal of Instrumentation , vol. 12 , P09032 . https://doi.org/10.1088/1748-0221/12/09/P09032

Title: Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection
Author: Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.
Contributor organization: Helsinki Institute of Physics
Date: 2017-09
Language: eng
Number of pages: 25
Belongs to series: Journal of Instrumentation
ISSN: 1748-0221
DOI: https://doi.org/10.1088/1748-0221/12/09/P09032
URI: http://hdl.handle.net/10138/307627
Abstract: Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20-25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p(+) implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO2 interface charge densities (Q(f)) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p(+) implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Q(f), that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.
Subject: Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
Radiation-hard detectors
Si microstrip and pad detectors
Simulation methods and programs
MICROSTRIP DETECTORS
RADIATION DETECTORS
SI-SIO2 INTERFACE
STRIP DETECTORS
ATLAS SCT
SENSORS
THEOREM
LOSSES
LAYER
114 Physical sciences
Peer reviewed: Yes
Rights: other
Usage restriction: openAccess
Self-archived version: acceptedVersion


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