Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

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Tupala , J O , Kemell , M L , Mattinen , M J , Meinander , N K , Seppälä , S S , Hatanpää , T T , Räisänen , J A , Ritala , M K & Leskelä , M A 2017 , ' Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water ' , Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films , vol. 35 , no. 4 , 041506 . https://doi.org/10.1116/1.4984279

Title: Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water
Author: Tupala, Jere Olavi; Kemell, Marianna Leena; Mattinen, Miika Juhana; Meinander, Nils Kristoffer; Seppälä, Sanni Sinikka; Hatanpää, Timo Tapio; Räisänen, Jyrki Antero; Ritala, Mikko Kalervo; Leskelä, Markku Antero
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2017-05-30
Number of pages: 8
Belongs to series: Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films
ISSN: 1520-8559
URI: http://hdl.handle.net/10138/307766
Abstract: Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl) amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two ALD windows were observed, between 80 and 100 C and between 125 and 200 C. The films grown on soda lime glass and silicon substrates were uniform across the substrates. With the water process the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, the growth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for composition and morphology. The films deposited with water showed crystallinity with the tetragonal SnO phase, and annealing in air increased the conductivity of the films while the SnO2 phase appeared. All the films deposited with ozone contained silicon as an impurity and were amorphous and nonconductive both as-deposited and after annealing. The films were further deposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements. The TiO2 nanostructure functioned also as a test structure for conformality of the processes.
Subject: 116 Chemical sciences
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