Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

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dc.contributor.author Tupala, Jere Olavi
dc.contributor.author Kemell, Marianna Leena
dc.contributor.author Mattinen, Miika Juhana
dc.contributor.author Meinander, Nils Kristoffer
dc.contributor.author Seppälä, Sanni Sinikka
dc.contributor.author Hatanpää, Timo Tapio
dc.contributor.author Räisänen, Jyrki Antero
dc.contributor.author Ritala, Mikko Kalervo
dc.contributor.author Leskelä, Markku Antero
dc.date.accessioned 2019-12-02T13:19:01Z
dc.date.available 2021-12-17T22:02:38Z
dc.date.issued 2017-05-30
dc.identifier.citation Tupala , J O , Kemell , M L , Mattinen , M J , Meinander , N K , Seppälä , S S , Hatanpää , T T , Räisänen , J A , Ritala , M K & Leskelä , M A 2017 , ' Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water ' , Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films , vol. 35 , no. 4 , 041506 . https://doi.org/10.1116/1.4984279
dc.identifier.other PURE: 84979579
dc.identifier.other PURE UUID: f2060d6d-b33a-41c9-afde-5f792fa7fed1
dc.identifier.other WOS: 000405346100017
dc.identifier.other Scopus: 85020004306
dc.identifier.other ORCID: /0000-0002-9895-9185/work/38057327
dc.identifier.other ORCID: /0000-0002-3583-2064/work/40818268
dc.identifier.other ORCID: /0000-0002-6210-2980/work/39202547
dc.identifier.other ORCID: /0000-0003-4837-1823/work/49416855
dc.identifier.other ORCID: /0000-0003-1451-9279/work/43229337
dc.identifier.other ORCID: /0000-0001-5830-2800/work/39202352
dc.identifier.other ORCID: /0000-0003-3745-8296/work/86937763
dc.identifier.uri http://hdl.handle.net/10138/307766
dc.description.abstract Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl) amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two ALD windows were observed, between 80 and 100 C and between 125 and 200 C. The films grown on soda lime glass and silicon substrates were uniform across the substrates. With the water process the growth rate at 100–250 C was 0.05–0.18A ° /cycle, and with the ozone process, the growth rate at 80–200 C was 0.05–0.11A ° /cycle. The films were further studied for composition and morphology. The films deposited with water showed crystallinity with the tetragonal SnO phase, and annealing in air increased the conductivity of the films while the SnO2 phase appeared. All the films deposited with ozone contained silicon as an impurity and were amorphous and nonconductive both as-deposited and after annealing. The films were further deposited in TiO2 nanotubes aiming to create a pn-junction which was studied by I-V measurements. The TiO2 nanostructure functioned also as a test structure for conformality of the processes. en
dc.format.extent 8
dc.language.iso eng
dc.relation.ispartof Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films
dc.rights unspecified
dc.rights.uri info:eu-repo/semantics/openAccess
dc.subject 116 Chemical sciences
dc.title Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water en
dc.type Article
dc.contributor.organization Department of Chemistry
dc.contributor.organization Department of Physics
dc.contributor.organization Mikko Ritala / Principal Investigator
dc.contributor.organization Department
dc.description.reviewstatus Peer reviewed
dc.relation.doi https://doi.org/10.1116/1.4984279
dc.relation.issn 1520-8559
dc.rights.accesslevel openAccess
dc.type.version publishedVersion

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