Low-Temperature Atomic Layer Deposition of Cobalt Oxide as an Effective Catalyst for Photoelectrochemical Water-Splitting Devices

Show full item record



Permalink

http://hdl.handle.net/10138/308511

Citation

Kim , J , Iivonen , T , Hämäläinen , J , Kemell , M , Meinander , K , Mizohata , K , Wang , L , Räisänen , J , Beranek , R , Leskelä , M & Devi , A 2017 , ' Low-Temperature Atomic Layer Deposition of Cobalt Oxide as an Effective Catalyst for Photoelectrochemical Water-Splitting Devices ' , Chemistry of Materials , vol. 29 , no. 14 , pp. 5796-5805 . https://doi.org/10.1021/acs.chemmater.6b05346

Title: Low-Temperature Atomic Layer Deposition of Cobalt Oxide as an Effective Catalyst for Photoelectrochemical Water-Splitting Devices
Author: Kim, Jiyeon; Iivonen, Tomi; Hämäläinen, Jani; Kemell, Marianna; Meinander, Kristoffer; Mizohata, Kenichiro; Wang, Lidong; Räisänen, Jyrki; Beranek, Radim; Leskelä, Markku; Devi, Anjana
Contributor organization: Department of Chemistry
Department of Physics
Department
Date: 2017-07-25
Language: eng
Number of pages: 10
Belongs to series: Chemistry of Materials
ISSN: 0897-4756
DOI: https://doi.org/10.1021/acs.chemmater.6b05346
URI: http://hdl.handle.net/10138/308511
Abstract: We have developed a low-temperature atomic layer deposition (ALD) process for depositing crystalline and phase pure spinel cobalt oxide (Co3O4) films at 120 °C using [Co(tBu2DAD)2] and ozone as coreagent. X-ray diffraction, UV–vis spectroscopy, atomic force microscopy, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis were performed to characterize the structure and properties of the films. The as-deposited Co3O4 films are crystalline with a low amount of impurities (<2% C and <5% H) despite low deposition temperatures. Deposition of Co3O4 onto thin TiO2 photoanodes (100 nm) for water oxidation resulted in 30% improvement of photocurrent (after 10 ALD cycles yielding small Co3O4 particles) as compared to pristine TiO2 films), and exhibited no detrimental effects on photocurrent response up to 300 deposition cycles (approximately 35 nm thick films), demonstrating the applicability of the developed ALD process for deposition of effective catalyst particles and layers in photoelectrochemical water-splitting devices.
Subject: 116 Chemical sciences
Peer reviewed: Yes
Usage restriction: openAccess
Self-archived version: acceptedVersion


Files in this item

Total number of downloads: Loading...

Files Size Format View
10.1021acs.chemmater.6b05346.pdf 1.425Mb PDF View/Open

This item appears in the following Collection(s)

Show full item record