Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes
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Javanainen , A , Muinos , H V , Nordlund , K , Djurabekova , F , Galloway , K F , Turowski , M & Schrimpf , R D 2018 , ' Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes ' , IEEE transactions on device and materials reliability. , vol. 18 , no. 3 , pp. 481-483 . https://doi.org/10.1109/TDMR.2018.2842253
| Title: | Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes |
| Author: | Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Djurabekova, Flyura; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D. |
| Contributor organization: | Helsinki Institute of Physics Department of Physics |
| Date: | 2018-09 |
| Language: | eng |
| Number of pages: | 3 |
| Belongs to series: | IEEE transactions on device and materials reliability. |
| ISSN: | 1530-4388 |
| DOI: | https://doi.org/10.1109/TDMR.2018.2842253 |
| URI: | http://hdl.handle.net/10138/308631 |
| Abstract: | Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. |
| Subject: |
Ion radiation effects
modeling power semiconductor devices Schottky diodes silicon carbide SINGLE-EVENT BURNOUT INORGANIC INSULATORS BARRIER DIODES THERMAL-DAMAGE POWER DIODES IRRADIATION 114 Physical sciences |
| Peer reviewed: | Yes |
| Usage restriction: | openAccess |
| Self-archived version: | acceptedVersion |
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