Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes

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http://hdl.handle.net/10138/308631

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Javanainen , A , Muinos , H V , Nordlund , K , Djurabekova , F , Galloway , K F , Turowski , M & Schrimpf , R D 2018 , ' Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes ' , IEEE transactions on device and materials reliability. , vol. 18 , no. 3 , pp. 481-483 . https://doi.org/10.1109/TDMR.2018.2842253

Title: Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes
Author: Javanainen, Arto; Muinos, Henrique Vazquez; Nordlund, Kai; Djurabekova, Flyura; Galloway, Kenneth F.; Turowski, Marek; Schrimpf, Ronald D.
Contributor organization: Helsinki Institute of Physics
Department of Physics
Date: 2018-09
Language: eng
Number of pages: 3
Belongs to series: IEEE transactions on device and materials reliability.
ISSN: 1530-4388
DOI: https://doi.org/10.1109/TDMR.2018.2842253
URI: http://hdl.handle.net/10138/308631
Abstract: Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation.
Subject: Ion radiation effects
modeling
power semiconductor devices
Schottky diodes
silicon carbide
SINGLE-EVENT BURNOUT
INORGANIC INSULATORS
BARRIER DIODES
THERMAL-DAMAGE
POWER DIODES
IRRADIATION
114 Physical sciences
Peer reviewed: Yes
Usage restriction: openAccess
Self-archived version: acceptedVersion


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