Channeling maps for Si ions in Si : Assessing the binary collision approximation

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Hobler , G & Nordlund , K 2019 , ' Channeling maps for Si ions in Si : Assessing the binary collision approximation ' , Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms , vol. 449 , pp. 17-21 . https://doi.org/10.1016/j.nimb.2019.04.029

Title: Channeling maps for Si ions in Si : Assessing the binary collision approximation
Author: Hobler, G.; Nordlund, K.
Contributor: University of Helsinki, Department of Physics
Date: 2019-06-15
Language: eng
Number of pages: 5
Belongs to series: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
ISSN: 0168-583X
URI: http://hdl.handle.net/10138/308759
Abstract: Simulations based on the binary collision approximation (BCA) are in principle less accurate than molecular dynamics (MD) simulations. In this work, we present a comprehensive comparison between BCA and MD for Si ions impinging on a (001)-Si surface by comparing "channeling maps", i.e., projected ranges of the ions as a function of incidence direction in a representative part of the angular space. We find quantitative differences to develop as the energy decreases below similar to 100 eV, but find qualitative agreement down to similar to 10 eV. Moreover, the quality of the BCA channeling maps depends on the implementation of the BCA, which is explained in terms of double-hits and missed collisions.
Subject: Channeling
Binary collision approximation
Molecular dynamics
ROBIN COMPUTER-SIMULATION
MD
114 Physical sciences
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