Simulation Study of Al Channeling in 4H-SiC

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Hobler , G , Nordlund , K , Current , M & Schustereder , W 2018 , Simulation Study of Al Channeling in 4H-SiC . in V Häublein & H Ryssel (eds) , IIT 2018 Proceedings . IEEE , pp. 247-250 , International Conference on Ion Implantation Technology , Würzburg , Germany , 16/09/2018 .

Title: Simulation Study of Al Channeling in 4H-SiC
Author: Hobler, Gerhard; Nordlund, Kai; Current, Michael; Schustereder, Werner
Other contributor: Häublein, Volker
Ryssel, Heiner
Contributor organization: Department of Physics
Publisher: IEEE
Date: 2018
Language: eng
Belongs to series: IIT 2018 Proceedings
ISBN: 978-1-5386-6829-0
URI: http://hdl.handle.net/10138/308763
Subject: 114 Physical sciences
Peer reviewed: Yes
Rights: cc_by_nd
Usage restriction: openAccess
Self-archived version: acceptedVersion


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