Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition

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Pysyväisosoite

http://hdl.handle.net/10138/308872

Lähdeviite

King , P J , Vehkamäki , M , Mattinen , M , Heikkilä , M J , Mizohata , K , Noh , W , Leskelä , M & Ritala , M 2019 , ' Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 37 , no. 2 , 020602 . https://doi.org/10.1116/1.5081997

Julkaisun nimi: Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition
Tekijä: King, Peter J.; Vehkamäki, Marko; Mattinen, Miika; Heikkilä, Mikko J.; Mizohata, Kenichiro; Noh, Wontae; Leskelä, Markku; Ritala, Mikko
Muu tekijä: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Päiväys: 2019-03
Kieli: eng
Sivumäärä: 4
Kuuluu julkaisusarjaan: Journal of vacuum science & technology : an official journal of the American Vacuum Society
ISSN: 0734-2101
URI: http://hdl.handle.net/10138/308872
Tiivistelmä: The authors demonstrate multilayer epitaxial films by atomic layer deposition and postdeposition annealing. Their example features two ABO(3) type perovskite oxide films with different materials properties-a conductor (LaNiO3) and an insulator (SrTiO3)-that can be integrated epitaxially once the geometric interaction between the two oxides' lattices is understood. Once preliminary epitaxial materials had been developed, the pilot multilayer device fabricated was an epitaxial metal-insulator-metal structure with layers of similar to 5 nm thickness. This work shows the potential for advanced device types based on epitaxial atomic layer deposited films, assuming that care is taken in the selection of processes and starting substrate. Published by the AVS.
Avainsanat: LANIO3 THIN-FILMS
GROWTH
SRTIO3
114 Physical sciences
221 Nano-technology
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Kokoteksti luettavissa: 2020-01-01


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