Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition

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http://hdl.handle.net/10138/308872

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King , P J , Vehkamäki , M , Mattinen , M , Heikkilä , M J , Mizohata , K , Noh , W , Leskelä , M & Ritala , M 2019 , ' Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 37 , no. 2 , 020602 . https://doi.org/10.1116/1.5081997

Titel: Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition
Författare: King, Peter J.; Vehkamäki, Marko; Mattinen, Miika; Heikkilä, Mikko J.; Mizohata, Kenichiro; Noh, Wontae; Leskelä, Markku; Ritala, Mikko
Medarbetare: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Materials Physics
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Datum: 2019-03
Språk: eng
Sidantal: 4
Tillhör serie: Journal of vacuum science & technology : an official journal of the American Vacuum Society
ISSN: 0734-2101
Permanenta länken (URI): http://hdl.handle.net/10138/308872
Abstrakt: The authors demonstrate multilayer epitaxial films by atomic layer deposition and postdeposition annealing. Their example features two ABO(3) type perovskite oxide films with different materials properties-a conductor (LaNiO3) and an insulator (SrTiO3)-that can be integrated epitaxially once the geometric interaction between the two oxides' lattices is understood. Once preliminary epitaxial materials had been developed, the pilot multilayer device fabricated was an epitaxial metal-insulator-metal structure with layers of similar to 5 nm thickness. This work shows the potential for advanced device types based on epitaxial atomic layer deposited films, assuming that care is taken in the selection of processes and starting substrate. Published by the AVS.
Subject: LANIO3 THIN-FILMS
GROWTH
SRTIO3
114 Physical sciences
221 Nano-technology
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