Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition

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dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Materials Physics en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor University of Helsinki, Department of Chemistry en
dc.contributor.author King, Peter J.
dc.contributor.author Vehkamäki, Marko
dc.contributor.author Mattinen, Miika
dc.contributor.author Heikkilä, Mikko J.
dc.contributor.author Mizohata, Kenichiro
dc.contributor.author Noh, Wontae
dc.contributor.author Leskelä, Markku
dc.contributor.author Ritala, Mikko
dc.date.accessioned 2019-12-31T22:57:05Z
dc.date.available 2021-09-14T02:46:05Z
dc.date.issued 2019-03
dc.identifier.citation King , P J , Vehkamäki , M , Mattinen , M , Heikkilä , M J , Mizohata , K , Noh , W , Leskelä , M & Ritala , M 2019 , ' Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition ' , Journal of vacuum science & technology : an official journal of the American Vacuum Society , vol. 37 , no. 2 , 020602 . https://doi.org/10.1116/1.5081997 en
dc.identifier.issn 0734-2101
dc.identifier.other PURE: 123466977
dc.identifier.other PURE UUID: c913cb2d-fe54-446c-ade7-4d8754421dcd
dc.identifier.other WOS: 000460437200002
dc.identifier.other ORCID: /0000-0003-1703-2247/work/55616276
dc.identifier.other ORCID: /0000-0002-6027-2089/work/55616828
dc.identifier.other ORCID: /0000-0003-4837-1823/work/55618576
dc.identifier.other Scopus: 85060817396
dc.identifier.other ORCID: /0000-0002-6210-2980/work/55614493
dc.identifier.other ORCID: /0000-0001-5830-2800/work/55881608
dc.identifier.uri http://hdl.handle.net/10138/308872
dc.description.abstract The authors demonstrate multilayer epitaxial films by atomic layer deposition and postdeposition annealing. Their example features two ABO(3) type perovskite oxide films with different materials properties-a conductor (LaNiO3) and an insulator (SrTiO3)-that can be integrated epitaxially once the geometric interaction between the two oxides' lattices is understood. Once preliminary epitaxial materials had been developed, the pilot multilayer device fabricated was an epitaxial metal-insulator-metal structure with layers of similar to 5 nm thickness. This work shows the potential for advanced device types based on epitaxial atomic layer deposited films, assuming that care is taken in the selection of processes and starting substrate. Published by the AVS. en
dc.format.extent 4
dc.language.iso eng
dc.relation.ispartof Journal of vacuum science & technology : an official journal of the American Vacuum Society
dc.rights en
dc.subject LANIO3 THIN-FILMS en
dc.subject GROWTH en
dc.subject SRTIO3 en
dc.subject 114 Physical sciences en
dc.subject 221 Nano-technology en
dc.title Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition en
dc.type Article
dc.description.version Peer reviewed
dc.identifier.doi https://doi.org/10.1116/1.5081997
dc.type.uri info:eu-repo/semantics/other
dc.type.uri info:eu-repo/semantics/publishedVersion
dc.contributor.pbl
dc.contributor.pbl
dc.contributor.pbl
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