Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Films

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Kukli , K , Kemell , M , Castan , H , Duenas , S , Seemen , H , Rähn , M , Link , J , Stern , R , Heikkilä , M J , Ritala , M & Leskelä , M 2018 , ' Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Films ' , ECS Journal of Solid State Science and Technology , vol. 7 , no. 5 , pp. P287-P294 . https://doi.org/10.1149/2.0021806jss

Title: Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Films
Author: Kukli, Kaupo; Kemell, Marianna; Castan, Helena; Duenas, Salvador; Seemen, Helina; Rähn, Mihkel; Link, Joosep; Stern, Raivo; Heikkilä, Mikko J.; Ritala, Mikko; Leskelä, Markku
Contributor: University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
University of Helsinki, Department of Chemistry
Date: 2018
Language: eng
Number of pages: 8
Belongs to series: ECS Journal of Solid State Science and Technology
ISSN: 2162-8769
URI: http://hdl.handle.net/10138/311241
Abstract: Thin mixed and nanolaminate films of ZrO2 and Al2O3 were grown by atomic layer deposition from the corresponding metal chlorides and water. The films were grown at 350 degrees C in order to ensure ZrO2 crystallization in the as-deposited state. The relative thicknesses of layers in the structure of the nanolaminates were controlled in order to maximize the content of metastable polymorphs of ZrO2 that have higher permittivity than that of the stable monoclinic ZrO2 . The multilayer films demonstrated interfacial charge polarization and saturative magnetization in external fields. The conductivity of the films could be switched between high and low resistance states by applying voltages of alternating polarity. (C) 2018 The Electrochemical Society.
Subject: ROOM-TEMPERATURE FERROMAGNETISM
ZRO2 NANOSTRUCTURES
RRAM DEVICES
ENCAPSULATION
CAPACITORS
EPITAXY
ALUMINA
GROWTH
221 Nano-technology
116 Chemical sciences
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