Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures

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Prozheeva , V , Makkonen , I , Li , H , Keller , S , Mishra , U K & Tuomisto , F 2020 , ' Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures ' , Physical Review Applied , vol. 13 , no. 4 , 044034 .

Title: Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures
Author: Prozheeva, Vera; Makkonen, Ilja; Li, Haoran; Keller, Stacia; Mishra, Umesh K.; Tuomisto, Filip
Contributor organization: Materials Physics
Helsinki Institute of Physics
Department of Physics
Date: 2020-04-13
Language: eng
Number of pages: 7
Belongs to series: Physical Review Applied
ISSN: 2331-7019
Abstract: We show that N-polar GaN/(Al, Ga)N/GaN heterostructures exhibit significant N deficiency at the bottom (Al, Ga)N/GaN interface, and that these N vacancies are responsible for the trapping of holes observed in unoptimized N-polar GaN/(Al, Ga)N/GaN high electron mobility transistors. We arrive at this conclusion by performing positron annihilation experiments on GaN/(Al, Ga)N/GaN heterostructures of both N and Ga polarity, as well as state-of-the-art theoretical calculations of the positron states and positron-electron annihilation signals. We suggest that the occurrence of high interfacial N vacancy concentrations is a universal property of nitride semiconductor heterostructures at net negative polarization interfaces.
114 Physical sciences
Peer reviewed: Yes
Rights: other
Usage restriction: openAccess
Self-archived version: publishedVersion

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