A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-xSnx

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Khanam , A , Vohra , A , Slotte , J , Makkonen , I , Loo , R , Pourtois , G & Vandervorst , W 2020 , ' A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-xSnx ' , Journal of Applied Physics , vol. 127 , no. 19 , 195703 . https://doi.org/10.1063/5.0003999

Title: A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-xSnx
Author: Khanam, Afrina; Vohra, Anurag; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Vandervorst, Wilfried
Contributor: University of Helsinki, Department of Physics
University of Helsinki, Department of Physics
University of Helsinki, Materials Physics
Date: 2020-05-21
Language: eng
Number of pages: 6
Belongs to series: Journal of Applied Physics
ISSN: 0021-8979
URI: http://hdl.handle.net/10138/316043
Abstract: Positron annihilation spectroscopy in the Doppler and coincidence Doppler mode was applied on Ge1 xSnx epitaxial layers, grown by chemical vapor deposition with different total As concentrations (1019-1021 cm3), high active As concentrations (1019 cm3), and similar Sn concentrations (5.9%-6.4%). Positron traps are identified as mono-vacancy complexes. Vacancy-As complexes, V-Asi, formed during the growth were studied to deepen the understanding of the electrical passivation of the Ge1 xSnx:As epilayers. Larger monovacancy complexes, V-Asi (i 2), are formed as the As doping increases. The total As concentration shows a significant impact on the saturation of the number of As atoms (i 1/4 4) around the vacancies in the sample epilayers. The presence of V-Asi complexes decreases the dopant activation in the Ge1 xSnx:As epilayers. Furthermore, the presence of Sn failed to hinder the formation of larger V-Asi complexes and thus failed to reduce the donor-deactivation.
Subject: GERMANIUM
DEFECTS
SI
114 Physical sciences
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