Diffusion bonding of Cu atoms with molecular dynamics simulations

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http://hdl.handle.net/10138/317315

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Xydou , A , Parviainen , S & Djurabekova , F 2020 , ' Diffusion bonding of Cu atoms with molecular dynamics simulations ' , Results in physics , vol. 16 , 102890 . https://doi.org/10.1016/j.rinp.2019.102890

Title: Diffusion bonding of Cu atoms with molecular dynamics simulations
Author: Xydou, A.; Parviainen, S.; Djurabekova, F.
Contributor: University of Helsinki, Helsinki Institute of Physics
University of Helsinki, Department of Physics
Date: 2020-03
Language: eng
Number of pages: 8
Belongs to series: Results in physics
ISSN: 2211-3797
URI: http://hdl.handle.net/10138/317315
Abstract: Diffusion bonding of copper disks is an important step during the assembly of accelerating structures -the main components of power radio-frequency linear accelerators-. During the diffusion bonding copper disks are subjected to pressure at high temperatures. Finding the optimal combination of pressure and temperature will enable an accurate design of manufacturing workflow and machining tolerances. However, required optimization is not possible without good understanding of physical processes developed in copper under pressure and high temperature. In this work, the combined effect of temperature and pressure on closing time of inter-granular voids is examined by means of molecular dynamics simulations. In particular, a nano-void of 3.5–5.5 nm in diameter representing a peak and a valley of surface roughness facing each other was inserted between identical copper grains. The simulations performed at T = 1250 K, the temperature used in experimental condition, and the 300–800 MPa pressure range indicated the dislocation-mediated enhancement of atomic diffusion leading to full void closure.
Subject: CLIC
Cu
Molecular dynamics
Diffusion bonding
High temperature
114 Physical sciences
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