Ti-Sr antisite : An abundant point defect in SrTiO3
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Karjalainen , A , Prozheeva , V , Makkonen , I , Guguschev , C , Markurt , T , Bickermann , M & Tuomisto , F 2020 , ' Ti-Sr antisite : An abundant point defect in SrTiO3 ' , Journal of Applied Physics , vol. 127 , no. 24 , 245702 . https://doi.org/10.1063/5.0010304
| Title: | Ti-Sr antisite : An abundant point defect in SrTiO3 |
| Author: | Karjalainen, Antti; Prozheeva, Vera; Makkonen, Ilja; Guguschev, Christo; Markurt, Toni; Bickermann, Matthias; Tuomisto, Filip |
| Contributor organization: | Materials Physics Department of Physics Helsinki Institute of Physics |
| Date: | 2020-06-28 |
| Language: | eng |
| Number of pages: | 9 |
| Belongs to series: | Journal of Applied Physics |
| ISSN: | 0021-8979 |
| DOI: | https://doi.org/10.1063/5.0010304 |
| URI: | http://hdl.handle.net/10138/318427 |
| Abstract: | We present a systematic study of the positron lifetime as a function of measurement temperature in strontium titanate ( SrTiO 3) single crystals grown in different conditions and by different synthesis methods. We combine our experimental results with state-of-the-art theoretical calculations of positron annihilation parameters. We find that the essentially omnipresent 180-190ps lifetime component is most likely the Ti Sr antisite defect, possibly coupled with one or more oxygen vacancies, supporting the importance of the Ti Sr antisite related defects in SrTiO 3. |
| Subject: |
TOTAL-ENERGY CALCULATIONS
VACANCY-TYPE DEFECTS ELECTRONIC-STRUCTURE SINGLE-CRYSTALS GROWTH SEMICONDUCTORS POSITRONS 114 Physical sciences |
| Peer reviewed: | Yes |
| Rights: | other |
| Usage restriction: | openAccess |
| Self-archived version: | publishedVersion |
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